A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.

A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.

A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.

A lens according to the disclosure includes a dielectric having a first surface and a second surface that is spaced from the first surface and that faces the first surface in a direction of a reference axis intersecting the first surface. The dielectric has an equivalent relative dielectric constant that decreases in a direction from the reference axis toward outer circumferences of the first surface and the second surface.

A conductive assembly may include a deformable substrate disposed around an axis, and a deformable conductor arranged on the deformable substrate. The substrate may be arranged to form a channel along the axis, and the deformable conductor may be arranged on the deformable substrate to form a waveguide. The deformable substrate, the first deformable conductor, and a second deformable conductor may be arranged to form a microstrip or a coaxial transmission line. A deformable transmission line may include a deformable substrate arranged in a substantially enclosed channel around an axis, a first deformable conductor arranged in a trace along the axis of the deformable substrate, and a second deformable conductor arranged on the deformable substrate to form a reference conductor for the first deformable conductor. A method of fabricating a deformable conductive assembly may include forming a deformable conductor on a deformable substrate, and disposing the deformable substrate around an axis.

A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

A waveguide assembly for a radio frequency (RF) signal network can include a plurality of waveguides, wherein at least two of the plurality of waveguides are integrally formed with each other. A satellite payload can include the waveguide assembly, a method of manufacturing a waveguide assembly, and a method of manufacturing a signal network. Also provided is a waveguide connector having a flange, and a plurality of ports, wherein the flange can couple to a further waveguide connector, each port of the plurality of ports being configured to interface with a respective waveguide.

A method of manufacturing a ceramic resonator radio frequency filter includes placing one or more first coaxial resonators on a printed circuit board, and placing one or more second coaxial resonators over the one or more first coaxial resonators so that the coaxial resonators are arranged in a stacked configuration on the printed circuit board. The method also includes electrically connecting the one or more first coaxial resonators and second coaxial resonators to the printed circuit board.

A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

The invention relates to a method of manufacturing technical radio frequency functional structures comprising the steps of providing a base body determining the shape of the functional structure and applying an electrically conductive layer to the shape-determining base body by means of wetting the base body with a dispersion containing microparticles and/or nanoparticles.