A hearing device is disclosed. The hearing device comprises a plurality of antennas. The hearing device comprises electronic components including a first electronic component. The plurality of antennas comprises a first antenna and a second antenna. The first antenna may comprise a coil part coiled along a first antenna axis. The first antenna may be configured for magnetic induction communication. The second antenna may be configured for communication in a frequency band in the GHz range. The second antenna may comprise a shielding part configured to shield the first antenna.

An antenna apparatus for a radio frequency (RF) coil to transmit signals to and to receive signal from a subject in a magnetic resonance imaging (MRI) system includes a distal surface facing away from the subject, a proximal surface facing towards the subject, a high permittivity material (HPM) having a shape, and an antenna coupled to the HPM and positioned on the proximal surface such that the antenna is positioned between the HPM and the subject.

An antenna apparatus for a radio frequency (RF) coil to transmit signals to and to receive signal from a subject in a magnetic resonance imaging (MRI) system includes a distal surface facing away from the subject, a proximal surface facing towards the subject, a high permittivity material (HPM) having a shape, and an antenna coupled to the HPM and positioned on the proximal surface such that the antenna is positioned between the HPM and the subject.

An antenna configured for near field communication includes a first coil for transmitting and receiving signals having a first frequency and a second coil for transmitting and receiving signals having a second frequency greater than at least twice the first frequency. The first and second coils are magnetically coupled with a coupling coefficient greater than 0.5.

An antenna configured for near field communication includes a first coil for transmitting and receiving signals having a first frequency and a second coil for transmitting and receiving signals having a second frequency greater than at least twice the first frequency. The first and second coils are magnetically coupled with a coupling coefficient greater than 0.5.

A communication device includes a conductive chassis, an electrical feed positioned within the conductive chassis and configured to supply a communication signal, an edge antenna at least partially formed in the conductive chassis at an edge of the communication device, and a conductive coil positioned within the conductive chassis in proximity to the edge antenna. The conductive coil is configured to receive the communication signal from the electrical feed and to generate a magnetic field corresponding to the communication signal that inductively drives the edge antenna to radiate a radio frequency signal corresponding to the communication signal.

A communication device includes a conductive chassis, an electrical feed positioned within the conductive chassis and configured to supply a communication signal, an edge antenna at least partially formed in the conductive chassis at an edge of the communication device, and a conductive coil positioned within the conductive chassis in proximity to the edge antenna. The conductive coil is configured to receive the communication signal from the electrical feed and to generate a magnetic field corresponding to the communication signal that inductively drives the edge antenna to radiate a radio frequency signal corresponding to the communication signal.

A field-effect transistor for terahertz wave detection using a gate as an antenna includes a silicon substrate including a source and a drain formed outside a channel region surrounding the source, and a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, in which the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor and the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor.

A field-effect transistor for terahertz wave detection using a gate as an antenna includes a silicon substrate including a source and a drain formed outside a channel region surrounding the source, and a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, in which the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor and the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor.

A dynamic antenna tuning system. The dynamic antenna tuning system includes: an antenna controller; and, a tunable antenna, the tunable antenna comprising a plurality of switches, the switches being controlled by the antenna controller to dynamically configure the antenna in one of a plurality of antenna geometry configurations.