A high-frequency module with a simple configuration and facilitates size reduction and mass production is provided. An oscillator that includes a bipolar transistor, an antenna, and mixers are realized as one circuit. A base of the bipolar transistor is electrically connected to a resonance pattern or the like that outputs a signal at a frequency in a quasi-millimeter wave band or higher by direct oscillation. A collector is electrically connected to a transmission line or the like which is connected to a power source. An emitter is electrically connected to a planar open transmission line or the like that operates as an antenna. A portion of the signal transmitted through the open transmission line is fed back to the base via a capacitance between the open transmission line and the base. The open transmission line is electrically connected to two diodes and each of which operates as a mixer.

A high-frequency module with a simple configuration and facilitates size reduction and mass production is provided. An oscillator that includes a bipolar transistor, an antenna, and mixers are realized as one circuit. A base of the bipolar transistor is electrically connected to a resonance pattern or the like that outputs a signal at a frequency in a quasi-millimeter wave band or higher by direct oscillation. A collector is electrically connected to a transmission line or the like which is connected to a power source. An emitter is electrically connected to a planar open transmission line or the like that operates as an antenna. A portion of the signal transmitted through the open transmission line is fed back to the base via a capacitance between the open transmission line and the base. The open transmission line is electrically connected to two diodes and each of which operates as a mixer.

A radio communication apparatus includes an RF circuit formed on one surface of a printed board and configured to generate an RF signal, a transmission line configured to transmit the RF signal, a transmission line configured to transmit a signal different from the RF signal, a ground layer formed on another surface of the printed board, an antenna element configured to emit the RF signal supplied from the RF circuit through the transmission line, and a connection layer configured to bond together the antenna element and the ground layer. The antenna element includes a plurality of layered dielectric substrates, a metal film formed on surfaces of them, and a through hole formed to penetrate the dielectric substrate closest to the printed board. A part of the transmission line is disposed between any of the plurality of layered dielectric substrates.

A radio communication apparatus includes an RF circuit formed on one surface of a printed board and configured to generate an RF signal, a transmission line configured to transmit the RF signal, a transmission line configured to transmit a signal different from the RF signal, a ground layer formed on another surface of the printed board, an antenna element configured to emit the RF signal supplied from the RF circuit through the transmission line, and a connection layer configured to bond together the antenna element and the ground layer. The antenna element includes a plurality of layered dielectric substrates, a metal film formed on surfaces of them, and a through hole formed to penetrate the dielectric substrate closest to the printed board. A part of the transmission line is disposed between any of the plurality of layered dielectric substrates.

Embodiments may relate to a radio frequency (RF) multi-chip module that includes a first RF die and a second RF die. The first and second RF dies may be coupled with a package substrate at an inactive side of the respective dies. A bridge may be coupled with an active side of the first and second RF dies die such that the first and second RF dies are communicatively coupled through the bridge, and such that the first and second RF dies are at least partially between the package substrate and the bridge. Other embodiments may be described or claimed.

A high-frequency reflector antenna (1) is provided that includes at least one main reflector (2), at least one sub-reflector (3) and at least one horn (4). The stationary elements (5.1, 5.2, 5.3, 5.4, 5.5, 5.6, 5.7, 5.8) for influencing the direction-dependent reception characteristic are present in the beam path between the main reflector (2) and the horn (4). The stationary elements (5.1, 5.2, 5.3, 5.4, 5.5, 5.6, 5.7, 5.8) may protrude into the free aperture area (6) of the horn (4). The stationary elements (5.1, 5.2, 5.3, 5.4, 5.5, 5.6, 5.7, 5.8) are switchable dipole elements (5.1.1, 5.2.1, 5.3.1, 5.4.1, 5.5.1, 5.6.1, 5.7.1, 5.8.1) that are arranged with their dipole axis (15) in a manner to influence the reception characteristics of elliptically to circularly or linearly polarised high-frequency radiation.

An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

A semiconductor device includes a base, a matching circuit including a substrate, a ground layer, and a signal line, wherein a width of the signal line on a first end side of the substrate is smaller than a width of the substrate and larger than that of the signal line on a second end side, and a distance between the ground layer and the signal line on the first end side is larger than a distance therebetween on the second end side, a semiconductor element electrically connected to the signal line on the first end side of the matching circuit by first bonding wires, a frame body, a feedthrough having a lead, and second bonding wires electrically connected to the lead and the signal line on the second end side, wherein the first bonding wires are arranged in parallel, and the second bonding wires are arranged in parallel.

A semiconductor device includes a base, a matching circuit including a substrate, a ground layer, and a signal line, wherein a width of the signal line on a first end side of the substrate is smaller than a width of the substrate and larger than that of the signal line on a second end side, and a distance between the ground layer and the signal line on the first end side is larger than a distance therebetween on the second end side, a semiconductor element electrically connected to the signal line on the first end side of the matching circuit by first bonding wires, a frame body, a feedthrough having a lead, and second bonding wires electrically connected to the lead and the signal line on the second end side, wherein the first bonding wires are arranged in parallel, and the second bonding wires are arranged in parallel.