Provided is a semiconductor device including: a semiconductor chip having a rectangular region including a first corner portion having a first notch portion, a second corner portion being provided to diagonally face the first corner portion, a third corner portion, and a fourth corner portion being provided to diagonally face the third corner portion on a surface and having a semiconductor element formed in the rectangular region; a first electrode including a fifth corner portion being provided on the first corner portion and having a second notch portion, a sixth corner portion being provided on the second corner portion, a seventh corner portion being provided on the third corner portion, and an eighth corner portion being provided on the fourth corner portion, the first electrode being provided on the semiconductor element, and the first electrode being electrically connected to the semiconductor element; and a first connector including a ninth corner portion being provided on the fifth corner portion and having a third notch portion and a twelfth corner portion being provided on the eighth corner portion, the first connector being provided on the first electrode, and the first connector being electrically connected to the first electrode.

Provided is a circuit module including a power supply chip module, a load chip module, and a system board. A power supply output terminal group of the power supply chip module is arranged side by side in a row along a side of the power supply chip module board, the power supply input terminal group of a load chip module includes a specific terminal group arranged in a specific row that is a row along a side of the load chip module board, and a wiring width along an arrangement direction of the power supply output terminal group of a wiring pattern in which the power supply output terminal group is connected to the system board is equal to or more than a wiring width W31 along an arrangement direction of the specific terminal group of the wiring pattern in which the specific terminal group is connected to the system board.

Disclosed embodiments include folded, top-to-bottom interconnects that couple a die side of an integrated-circuit package substrate, to a board as a complement to a ball-grid array for a flip-chip-mounted integrated-circuit die on the die side. The folded, top-to-bottom interconnect is in a molded frame that forms a perimeter around an infield to receive at least one flip-chip IC die. Power, ground and I/O interconnections shunt around the package substrate, and such shunting includes voltage regulation that need not be routed through the package substrate.

An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a bottom inner surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.

-- A first electrical connection box includes a housing, a holder (50) that is provided inside the housing and holds an electrical component, and a terminal block (60) attached to the holder (50). The terminal block (60) includes a terminal support base (61) attached to the holder (50), and a busbar (62) supported on the terminal support base (61). The busbar (62) includes a planar first connection surface (84) to which a first wire (21) is to be electrically connected, and a planar second connection surface (86) to which a second wire (22) is to be electrically connected, the second wire (22) being different from the first wire (21). When a direction perpendicular to the first connection surface (84) is defined as a first direction (X11), the second connection surface (86) is perpendicular to a second direction (X12) that intersects with the first direction (X11). --

A multifunction carrier for receiving circuit components of a battery system for an electric vehicle is disclosed, wherein the multifunction carrier includes: a busbar assembly with at least one charging connection rail and a drive connection rail; and an insulating housing in which the busbar assembly is embedded, wherein the insulating housing has openings exposing contact surfaces of the connecting rails, and wherein the insulating housing has plug connectors which are designed to provide a pluggable mechanical and electrical contact between the circuit components of the battery system with the open contact surfaces of the connecting rails. The invention further relates to a high-voltage contactor for a battery system of an electric vehicle.

A distribution block for attaching to a support rail extending in a support direction comprises an insulating housing, and a conductive member arranged in the insulating housing. A mounting assembly of the distribution block is connected to the insulating housing for attaching to the support rail. The distribution block is mountable on the support rail in a longitudinal configuration wherein the extension direction of the insulating housing is substantially parallel to the support direction, and in a transverse configuration wherein the extension direction of the insulating housing is transverse to the support direction.

Provided is a semiconductor package including: at least two pads, a first substrate, at least two semiconductor devices, a second substrate, an electrical connection part, and a package housing, wherein the at least two pads are electrically or structurally separated from each other, the first substrate is formed of leads spaced apart from the pads, the at least two semiconductor devices are bonded on each of the pads, the second substrate is formed on and spaced apart from the upper parts of the semiconductor devices, is placed on and electrically connected to the at least one lead of the first substrate, and includes at least one penetrated opening unit on an area facing the at least one semiconductor device, the electrical connection part electrically connects the at least one semiconductor device with the second substrate, and the package housing covers the semiconductor devices and the electrical connection part. Accordingly, the semiconductor package has a multi die structure and is compact. Also, a shielding performance of electromagnetic interference (EMI) and a heat radiation performance are improved in the semiconductor package.

A semiconductor device according to the disclosure includes a first semiconductor chip, a second semiconductor chip, a first metal plate provided on an upper surface of the first semiconductor chip, a second metal plate provided on an upper surface of the second semiconductor chip and a sealing resin covering the first semiconductor chip, the second semiconductor chip, the first metal plate and the second metal plate, wherein a groove is formed in the sealing resin, the groove extending downwards from an upper surface of the sealing resin, the first metal plate includes, at an end facing the second metal plate, a first exposed portion exposed from a side face of the sealing resin forming the groove, and the second metal plate includes, at an end facing the first metal plate, a second exposed portion exposed from a side face of the sealing resin forming the groove.