An EUV light source for an illumination device of a microlithographic proj ection exposure apparatus, includes an electron source for generating an electron beam, an accelerator unit for accelerating the electron beam, and an undulator arrangement for generating EUV light by deflecting the electron beam. The undulator arrangement includes a first undulator for generating EUV light having a first polarization state and at least one second undulator for generating EUV light having a second polarization state different than the first polarization state. The second undulator is downstream of the first undulator along the direction of propagation of the electron beam. The undulator arrangement is configured so that it has a first operating mode, in which the first undulator is in saturation with regard to the generation of EUV light, and at least one second operating mode, in which the first undulator is not in saturation with regard to the generation of EUV light.

An EUV light source for an illumination device of a microlithographic proj ection exposure apparatus, includes an electron source for generating an electron beam, an accelerator unit for accelerating the electron beam, and an undulator arrangement for generating EUV light by deflecting the electron beam. The undulator arrangement includes a first undulator for generating EUV light having a first polarization state and at least one second undulator for generating EUV light having a second polarization state different than the first polarization state. The second undulator is downstream of the first undulator along the direction of propagation of the electron beam. The undulator arrangement is configured so that it has a first operating mode, in which the first undulator is in saturation with regard to the generation of EUV light, and at least one second operating mode, in which the first undulator is not in saturation with regard to the generation of EUV light.

This relates to a method of forming a device structure, including: providing at least one device component having front and rear device component surfaces and at least one electrically conductive region on the device component surfaces; providing at least one contact sheet including a polymeric material and at least one electrically conductive element with a non-circular cross-sectional shape and embedded in the polymeric material such that a surface portion of the electrically conductive element is exposed; applying a bonding material to one or both of the exposed surface portion and the electrically conductive regions on the device component surfaces; positioning the contact sheet relative to the device component such that the bonding material is located between the electrically conductive region and the exposed surface portion; activating the bonding material such that a bond and an electrically conductive coupling are formed between the electrically conductive region and the exposed surface portion.

A tip part for an endoscope has a vision receptor having a vision sensor for providing an image from received light, a first lens, and a casing, the casing supporting the first lens so that the casing substantially maintains a position of the first lens in relation to the vision sensor; a first light source; an exterior housing; and a light shield positioned between the vision receptor and the first light source so as to prevent ingress of stray light from the first light source into the vision receptor by optically shielding the vision receptor; wherein the casing is formed integrally with the exterior housing so that the casing also substantially maintains the first lens in a position in relation to the exterior housing.

A stacked electronic component comprises a stack of three or more print layers. Each print layer has an area less than any print layers beneath the print layer in the stack. Each print layer comprises a dielectric layer and a functional layer disposed on the dielectric layer. The functional layer comprises an exposed conductive portion that is not covered with a dielectric layer of any of the print layers and each exposed conductive portion is nonoverlapping with any other exposed conductive portion. A patterned electrode layer is coated on at least a portion of the stack and defines one or more electrodes. Each electrode of the one or more electrodes in electrical contact with an exclusive subset of the exposed conductive portions. The functional layers can be passive conductors forming capacitors, resistors, inductors, or antennas, or active layers forming electronic circuits.

A method and an apparatus for selectively cancelling the effect of the active center of a molecule are provided. The method comprises illuminating a target molecule with two synchronized ultrashort X-ray pulses using a laser, the two synchronized ultrashort X-ray pulses having different central photon energies the subtraction of which matches the photon energy of a peak of the core spectrum of the target molecule, such that a core state of an atom of the target molecule, and also of identical surrounding molecules, is selectively excited by the re-DFG effect as a result of the illumination. The method is implementable for simple or complex molecular systems and bulk materials.

A method and an apparatus for selectively cancelling the effect of the active center of a molecule are provided. The method comprises illuminating a target molecule with two synchronized ultrashort X-ray pulses using a laser, the two synchronized ultrashort X-ray pulses having different central photon energies the subtraction of which matches the photon energy of a peak of the core spectrum of the target molecule, such that a core state of an atom of the target molecule, and also of identical surrounding molecules, is selectively excited by the re-DFG effect as a result of the illumination. The method is implementable for simple or complex molecular systems and bulk materials.

Systems, computer-implemented methods, and/or computer program products that can facilitate target qubit decoupling in an echoed cross-resonance gate are provided. According to an embodiment, a computer-implemented method can comprise receiving, by a system operatively coupled to a processor, both a cross-resonance pulse and a decoupling pulse at a target qubit. The cross-resonance pulse propagates to the target qubit via a control qubit. The computer-implemented method can further comprise receiving, by the system, a state inversion pulse at the control qubit. The computer-implemented method can further comprise receiving, by the system, both a phase-inverted cross-resonance pulse and a phase-inverted decoupling pulse at the target qubit. The phase-inverted cross-resonance pulse propagates to the target qubit via the control qubit.

A manufacturing method of a display device includes preparing a display module including a display part, a bending part adjacent to the display part, and a pad part adjacent to the bending part, coupling a lower protective film including a polyimide film to a lower portion of the display module, coupling a window to an upper portion of the display module, removing a portion of the lower protective film corresponding to the display part and the bending part after the coupling of the window to the upper portion of the display module, and coupling a lower protective member corresponding to the display part and including a material different from a material of the lower protective film to the lower portion of the display module.

Methods and apparatus reduce chucking abnormalities for electrostatic chucks by ensuring proper planarizing of ceramic surfaces of the electrostatic chuck. In some embodiments, a method for planarizing an upper ceramic surface of an electrostatic chuck assembly may comprise placing the electrostatic chuck assembly in a first planarizing apparatus, altering an upper ceramic surface of the electrostatic chuck assembly, and halting the altering of the upper ceramic surface of the electrostatic chuck assembly when an S.sub.a parameter is less than approximately 0.1 microns, an S.sub.dr parameter is less than approximately 2.5 percent, an S.sub.z parameter is less than approximately 10 microns for any given area of approximately 10 mm.sup.2 of the upper ceramic surface, or a pit-porosity depth parameter of greater than 1 micron is less than approximately 0.1 percent of area of the upper ceramic surface.