A method for extending and enhancing bright coherent high-order harmonic generation into the VUV-EUV-X-ray regions of the spectrum involves a way of accomplishing phase matching or effective phase matching of extreme upconversion of laser light at high conversion efficiency, approaching 10.sup.−3 in some spectral regions, and at significantly higher photon energies in a waveguide geometry, in a self-guiding geometry, a gas cell, or a loosely focusing geometry, containing nonlinear medium. The extension and enhancement of the coherent VUV, EUV, X-ray emission to high photon energies relies on using VUV-UV-VIS lasers of shorter wavelength. This leads to enhancement of macroscopic phase matching parameters due to stronger contribution of linear and nonlinear dispersion of both atoms and ions, combined with a strong microscopic single-atom yield.

A method for extending and enhancing bright coherent high-order harmonic generation into the VUV-EUV-X-ray regions of the spectrum involves a way of accomplishing phase matching or effective phase matching of extreme upconversion of laser light at high conversion efficiency, approaching 10.sup.−3 in some spectral regions, and at significantly higher photon energies in a waveguide geometry, in a self-guiding geometry, a gas cell, or a loosely focusing geometry, containing nonlinear medium. The extension and enhancement of the coherent VUV, EUV, X-ray emission to high photon energies relies on using VUV-UV-VIS lasers of shorter wavelength. This leads to enhancement of macroscopic phase matching parameters due to stronger contribution of linear and nonlinear dispersion of both atoms and ions, combined with a strong microscopic single-atom yield.

According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.

An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.

An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.

A MASER (Microwave Amplified Stimulated Emission of Radiation) emitter is fabricated of thin film components, including a thin film of nitrogen-implanted, epitaxial crystal diamond. The MASER elements can also include a controllable Q-switching layer and be arranged in a thin panel, phased array to generate a single beam of coherent, mode-locked, continuous wave MASER radiation.

A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

A laser module includes a laser source and an optical marshalling module. The laser source is configured to generate and output a plurality of laser beams. The plurality of laser beams have different wavelengths relative to each other. The different wavelengths are distinguishable to an optical data communication system. The optical marshalling module is configured to receive the plurality of laser beams from the laser source and distribute a portion of each of the plurality of laser beams to each of a plurality of optical output ports of the optical marshalling module, such that all of the different wavelengths of the plurality of laser beams are provided to each of the plurality of optical output ports of the optical marshalling module. An optical amplifying module can be included to amplify laser light output from the optical marshalling module and provide the amplified laser light as output from the laser module.

According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.