An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.

Disclosed here are methods, devices, and systems for generating an output light beam for a pulsed laser. An example method may comprise generating one or more pump optical beams comprising at least two photons having a pump wavelength. A first nonlinear stage may convert the at least two photons to a first photon having a first wavelength that is half of the pump wavelength. The first optical beam may be caused to spatially overlap with a seed optical beam. At least two second nonlinear stages separated by a gap may be used to convert, based on the seed optical beam, the first photon to a second photon having a second wavelength and a third photon having a target wavelength greater than the pump wavelength. A third nonlinear stage may convert the second photon to a fourth photon and a fifth photon each having the target wavelength or having a wavelength within an offset range of the target wavelength.

A light-emitting apparatus includes: a body having an inner space and an opening, the body incorporating at least one semiconductor laser element the body being made of a metal; and a sealing glass member joined to the body, to hermetically seal the inner space. The sealing glass member has a surface adjacent to the body, the surface of the sealing glass member being provided with a base joint layer in a joint region where the sealing glass member and the body are joined together, the base joint layer being made of a metal having a thermal expansion coefficient that falls between a thermal expansion coefficient of the sealing glass member and a thermal expansion coefficient of the metal constituting the body. The sealing glass member is joined to the body with the base joint layer and a solder-containing joint layer interposed between the sealing glass member and the body.

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

A multi-wavelength laser module including a base plate, a plurality of radiation sources mounted on the base plate, at least one telescope including a first lens and a second lens wherein the second lens is arranged at a distance from the first lens along a radiation beam path, thereby creating a telescopic effect. A beam angle correction plate is arranged between the first lens and the second lens in the radiation beam path, the beam angle correction plate being angled in relation to the radiation beam path so as to parallel shift the radiation beam inside the telescope and thereby adjust the pointing direction of the radiation beam after passage of the telescope. Further, a method for assembling a multi-wavelength laser system provided with telescopes with such beam angle correction plate.

In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.

A method for a calibration of at least one laser diode, in particular at least one laser diode of a laser projection device. The at least one laser diode is calibrated on the basis of a comparison of at least one currently acquired characteristic value of the at least one laser diode with at least one characteristic value, stored in at least one database, of a model laser diode that is at least substantially identical in construction to the at least one laser diode.

Provided is a laser device in which: a laser medium doped with ytterbium emits light upon absorption of excitation light; the light emitted by the laser medium is amplified to obtain output light; and the output light is outputted in the form of a plurality of pulses. In the laser device, a spatial filter is disposed in the optical path of the light emitted by the laser medium or is disposed in the optical path of the output light outputted from an optical resonator, the spatial filter being configured to filter out a portion of the light or of the output light around the optical axis.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.