This application provides an optical module, and relates to the field of optical communication. An optical module provided in the embodiments of this application includes a laser box and a silicon photonic chip that are enclosed and packaged by an upper enclosure part and a lower enclosure part. The laser box is disposed on and is in contact with the surface of the silicon photonic chip by the side wall or the base. The laser chip is disposed on the top plane of the laser box. The top plane is in contact with the upper enclosure part for heat dissipation, so as to help heat generated by the laser chip be conducted to the upper enclosure part via the top plane, so that the heat generated by the laser chip is dissipated not via the silicon photonic chip.

A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

Disclosed herein are aspects of an optical pulse stretcher for temporally stretching a short duration pulsed light signal to reduce its peak power, thus reducing the risk of causing damage to components that receives the pulsed light signal. Some embodiments are directed to a molecule sequencing system, in which photochemical damage caused by laser pulses having high peak power may be mitigated by the optical pulse stretcher. In one embodiment, the optical pulse stretcher comprises a polarizing beam splitter, a quarter-wave plate and a single etalon disposed in series. In another embodiments, an optical pulse stretcher splits a pulsed light signal along multiple delay lines before combining the split signals together to form a stretched light signal.

In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

An optical system comprising an optoelectronic device having a facet and a coating on the facet. The facet is configured to be in optical communication with at least a first optical medium during a first time period and a second optical medium during a second time period. The first optical medium has a first refractive index and the second optical medium has a second refractive index different from the first refractive index. The coating is configured to provide a first reflectance during the first time period for optical signals in a predetermined wavelength range and to provide a second reflectance during the second time period for optical signals in the predetermined wavelength range wherein the second reflectance is equal to the first reflectance within a negligible margin for optical signals having at least one wavelength in the predetermined wavelength range.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

A light emitting device includes one or more electrical components and a base member. The electrical components include a first semiconductor laser element, which has a light emission end surface. The base member has a first surface on which the first semiconductor laser element is disposed. The base member includes a plurality of metal films including a first metal film and a second metal film. The first metal film is electrically connected to at least one of the electrical components, and defines a first alignment mark for aligning the first semiconductor laser element. The second metal film is electrically connected to at least one of the electrical components, and defines a second alignment mark for aligning the first semiconductor laser element. A straight line connecting the first alignment mark and the second alignment mark extends parallel to the light emission end surface of the first semiconductor laser element.

An acousto-optic system may include a laser source, and an AOM coupled to the laser source and having an acousto-optic medium and transducer electrodes carried by the medium. The acousto-optic system may also include an interface board with a dielectric layer and signal contacts carried by the dielectric layer, and connections coupling respective signal contacts with respective transducer electrodes. Each connection may include a dielectric protrusion extending from the AOM, and an electrically conductive layer on the dielectric protrusion for coupling a respective transducer electrode to a respective signal contact.

A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

A method and an apparatus for collecting powder samples in real-time in powder bed fusion additive manufacturing may involves an ingester system for in-process collection and characterizations of powder samples. The collection may be performed periodically and uses the results of characterizations for adjustments in the powder bed fusion process. The ingester system of the present disclosure is capable of packaging powder samples collected in real-time into storage containers serving a multitude purposes of audit, process adjustments or actions.