A laser emitter includes an emitting assembly and a laser deflection assembly, wherein the emitting assembly that has a beam outlet, and the beam outlet is configured to emit a laser beam, the laser deflection assembly that is at the beam outlet and is movable relative to the beam outlet, the laser deflection assembly is configured to change an angle of deviation of the laser beam emitted from the beam outlet when the laser deflection assembly is translated relative to the beam outlet, and an included angle is between a translation direction of the laser deflection assembly and a center line of the laser beam emitted from the beam outlet.

An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

A laser apparatus includes: a light source configured to generate laser light; and an optical negative feedback unit configured to narrow a spectral line of the laser light using optical negative feedback. A modulation signal is input to the light source to modulate a frequency of the laser light. A modulation amount in the frequency of the laser light is detected. A modulation sensitivity is calculated from (i) the modulation amount and (ii) an intensity of the modulation signal.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.

A system includes multiple laser diode modules that are spatially separated and configured to generate multiple optical beams that propagate at angles relative to each other. The system also includes an optical element having at least one entrance surface and at least one exit surface. The optical element is configured to receive the optical beams at the at least one entrance surface and output each optical beam through the at least one exit surface such that the output optical beams are closely spaced, substantially the same size, and substantially parallel to each other at a common distance downstream from the optical element, and the optical beams all share a common downstream image plane.

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

A semiconductor-fiber-laser assembly is provided that includes a pumping module, an active optical fiber and an assembling board. The active optical fiber is provided on an upper surface of the assembling board, the pumping module is provided on a surface of the assembling board that is the same as or opposite to the upper surface; and input-side and output-side optical-fiber gratings are provided at two ends of the active optical fiber, to form a laser resonator between the input-side and output-side optical-fiber gratings. The pumping module includes a plurality of semiconductor-laser single emitters, a collimating-lens group and a mirror group that are sequentially arranged, and light beams from the semiconductor-laser single emitters pass through the mirror group to realize beam combination.

A tunable laser assembly uses a fundamental wavelength between 1 μm and 1.1 μm to alternately generate laser output light at two or more output wavelengths within the range of 184 nm to 200 nm by directing the fundamental light through different regions of a fan-out periodically poled nonlinear crystal to generate corresponding different down-converted signals, and using different nonlinear summing crystals to mix the different down-converted signals with a fifth harmonic of the fundamental wavelength. Each nonlinear summing crystal has a crystal axis aligned at an angle relative to the light propagation direction to facilitate the efficient transmission and summing of the fifth harmonic with an associated down-converted signal. In response to a user-selected output wavelength, a frequency control system positions the fan-out periodically poled nonlinear crystal to generate a corresponding down-converted signal frequency and positions an associated nonlinear summing crystal to receive the fifth harmonic and the corresponding down-converted signal.

A light emitting device includes: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base, the first light reflecting member having a first light reflecting face including a plane configured to reflect the first light; a second semiconductor laser element disposed on an upper surface of the base and configured to emit second light; a second light reflecting member disposed on the upper surface of the base, the second light reflecting member having a second light reflecting face including a plane configured to reflect the second light; and a phosphor member onto which the first light reflected from the first light reflecting member and the second light reflected from the second light reflecting member are irradiated.