The present invention is directed to an electrical wiring device that includes a processing circuit is configured to determine the wiring state based on detecting a wiring state parameter at the plurality of line terminals during a predetermined period after the tripped state has been established. The processing circuit is configured to store a wiring state indicator in a wiring state register based on a wiring state determination. The wiring state register being preset to trip the circuit interrupter when the AC power source is applied by an installer to the plurality of line terminals or the plurality of load terminals for the first time.

A host voltage monitor is provided for a transceiver. The host voltage monitor may include a comparator, which compares two voltages, one representative of the present host voltage, and the other representative of a threshold voltage level for the host voltage, that may indicate an imminent loss of power. Once the threshold is crossed, an alarm and/or a fault warning data packet may be automatically generated before the power fault causes the transceiver to shut down.

An electrical receptacle contains contacts, at least one contact for electrical connection to a hot power line and at least one contact for a neutral power line. A controlled switch, such as a TRIAC, is connected in series relationship between the contact and the hot power line. One or more sensors are provided which detect signals of the hot power line and/or the neutral power line. The processor provides activation or deactivation control to the controlled switch in response to the detected signals that are indicative of conditions relative to the first and second contacts.

A method of controlling a current path range using an electric field is disclosed, and the method of controlling a current path range includes applying an electric field to an active layer including a spontaneous polarization material through an application electrode disposed adjacent to the active layer to form a polarization region of the active layer, and forming a variable low resistance region corresponding to a boundary of the polarization region, wherein the variable low resistance region is a region of the active layer having a lower electrical resistance than another region of the active layer adjacent to the variable low resistance region and allows an electrical path to be formed.

A self-powered current sensor is described. The self-powered current sensor including an electrical signal input configured to receive a current signal. Further, the self-powered current sensor includes a power circuit configured to generate a power voltage from an electrical signal. The self-powered current sensor also includes a variable resistor configured to set a value corresponding to one or more indicators on the electrical sensor and an amplifier coupled with a variable resistor and a power circuit. And, the self-powered current sensor includes an alarm coupled with an amplifier, an alarm configured to activate based on a value set by said variable resistor.

An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an overcurrent, the short-circuit protection unit outputs an alarm signal to a composition unit. Also, it detects the temperature of the power semiconductor module by using a temperature detection element, converts the detected temperature into a digital signal in the temperature information generating unit, and outputs the digitized temperature information to the composition unit. The composition unit composites the temperature information and the alarm signal and one resultant composite output is transmitted to a control unit on the low voltage side.

A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.

A conveyor facility having at least one traveling unit, which has an electrical load, in particular an electric drive and which can be moved along a conveyor path by means of the drive; and a railbus, which is arranged along the conveyor path and which has at least one supply collector wire via which the traveling unit is supplied with power. In order to reduce the space required by the railbus, a safety device is provided which has only one safety collector wire and yet ensures an emergency stop in a fault-tolerant manner.

A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.

In described examples, a first transistor has: a drain coupled to a source of a depletion-mode transistor; a source coupled to a first voltage node; and a gate coupled to a control node. A second transistor has: a drain coupled to a gate of the depletion-mode transistor; a source coupled to the first voltage node; and a gate coupled through at least one first logic device to an input node. A third transistor has: a drain coupled to the gate of the depletion-mode transistor; a source coupled to a second voltage node; and a gate coupled through at least one second logic device to the input node.