A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element. The control circuit further includes a plurality of alarm detection circuits respectively detecting a plurality of abnormalities, a protection circuit stopping the gate control circuit responsive to the detection of any abnormality, an alarm signal generation circuit generating an alarm signal responsive to the detected abnormality, a warning detection circuit detecting a warning before any of the abnormalities is detected, and a pulse generation circuit generating a warning signal while the warning is being detected. The alarm signal is a one-shot pulse having a pulse width thereof corresponding to the detected abnormality, such that alarm signals generated responsive to different abnormalities have different pulse widths. The warning signal includes a plurality of successive pulses, each of which has a pulse width smaller than any of the pulse widths of the alarm signals.

A leakage current detection and protection device includes a leakage current detection module for generating a detection feedback signal when detecting a leakage current on the power supply lines, wherein the power supply lines supply a working power to the leakage current detection module during half of the AC power cycles; a self-test module for testing whether the leakage current detection module is faulty based on the detection feedback signal, which includes: a simulated leakage current generating circuit for generating a simulated leakage current signal; a fault signal generating module for generating a self-test fault signal when the leakage current detection module has a fault; and a self-test compensation module for supplying an auxiliary working power to the leakage current detection module so the leakage current detection module is in a working state whenever the simulated leakage current is generated. This prevents misjudgment by the leakage current detection module.

A power semiconductor device protection circuit includes: a drive circuit that drives a power semiconductor device; a current detector which includes a first resistor and an inductor connected in parallel; and a detection circuit that detects a short-circuit condition of the power semiconductor device. One end of the first resistor and one end of the inductor are connected to one terminal of the power semiconductor device. The detection circuit detects the short-circuit condition of the power semiconductor device by comparing a voltage of the one terminal of the power semiconductor device, which changes as a function of current flow through the first resistor and the inductor, with a short-circuit detection voltage. A reference potential of the drive circuit is connected to the other end of the first resistor and the other end of the inductor.

The present application provides an electric protection circuit, which relates to the field of battery power. The electric protection circuit includes a battery pack, a main positive switch, a load device and a main negative switch connected in series. The main positive switch and/or the main negative switch include at least one semiconductor switch. The main positive switch and/or the main negative switch in the electric protection circuit are connected in parallel to a protection module, which absorbs electric energy across two terminals of the main positive switch and/or the main negative switch when the main positive switch and/or the main negative switch are turned off. The technical solution of the present application can improve the safety of the electric protection circuit.

The present application provides an electric protection circuit, which relates to the field of battery power. The electric protection circuit includes a battery pack, a main positive switch, a load device and a main negative switch connected in series. The main positive switch and/or the main negative switch include at least one semiconductor switch. The main positive switch and/or the main negative switch in the electric protection circuit are connected in parallel to a protection module, which absorbs electric energy across two terminals of the main positive switch and/or the main negative switch when the main positive switch and/or the main negative switch are turned off. The technical solution of the present application can improve the safety of the electric protection circuit.

Electrical circuit arrangement for an energy storage system comprising a first electrochemical energy storage device and a second electrochemical energy storage device.

A system for limiting a peak current of short-circuit current comprises a first high-frequency branch configured to provide a first high-frequency current to a first switch (1SKa) of a first phase branch of a three-phase AC when the first phase branch occurs a short-circuit; a second high-frequency branch configured to provide a second high-frequency current to a second switch (1SKc) of a second phase branch of the three-phase AC when the second phase branch occurs a short-circuit; and a third phase branch of the three-phase AC connected in parallel with the first phase branch and the second phase branch and configured to always supply power.

A device comprising a high temperature superconductor, HTS, circuit; wherein the HTS circuit comprises: a quenchable section comprising HTS material and connected in series to other elements of the HTS circuit, the HTS material comprising a stack of HTS takes comprising at least one HTS tape; the device further comprising: a quenching system configured to quench the HTS material in the quenchable section; a quench protection system configured to detect temperature rises in the HTS circuit and, in response to detection of a temperature rise, cause the quenching system to quench the superconducting material in the quenchable section in order to dump stored magnetic energy from the HTS circuit into the quenchable section; wherein the HTS circuit is configured such that, when in use, the magnetic field on the or each HTS tape is substantially parallel to a a-b plane of the HTS tape, and the quenching system is configured to quench the HTS material by producing an additional magnetic field along the length of the or each HTS tape within the quenchable section, such that the additional magnetic field has a component perpendicular to the a-b plane of the HTS tape.

Disclosed are an electrostatic protection circuit, a display substrate and a display apparatus. The electrostatic protection circuit includes: a plurality of first transistors (11) on a base substrate, each of which includes a gate, an active layer (112), a first electrode (113), a second electrode (114) and a connection part (115). Gates of the first transistors (11) are connected to each other to form a control line (12). The first electrode (113) of each first transistor (11) is electrically connected to a panel crack detect line (PL), the connection part (115) is connected between the first electrode (113) and the second electrode (114), and the active layer (112) and the gate of each first transistor (11) are arranged in an overlapping manner and insulated and separated from each other to form a first capacitor. The control line (12) is electrically connected to a first power supply line (VSS).

Provided are a protection circuit and a photovoltaic system capable of irreversibly interrupting a current path of photovoltaic units such as solar cells by a signal in an emergency such as a fire. The protection circuit includes: a photovoltaic units 26, a protection element 2 provided on a current path of the photovoltaic units 26, and a switch 3 for activating the protection element 2, wherein the protection element 2 irreversibly interrupts the current path of the photovoltaic units 26.