A power module and a carrier board are disclosed. The carrier board includes a circuit board body and a prefabricated substrate. The circuit board body includes a wiring layer. The prefabricated substrate is embedded in the circuit board body and includes an insulation layer and a metal layer, the metal layer is disposed on the insulation layer. The insulation layer is formed by a ceramic material. The metal layer is connected to the insulation layer through a sintering process. A surface of the insulation layer , which has contact with the at least one metal layer, has at least a part exposed outside of the at least one metal layer, the part of the insulation layer exposed to the outside of the at least one metal layer is an outer edge portion, and the outer edge portion is extended into the circuit board body along a horizontal direction.

The power conversion device includes a semiconductor module having a connection terminal, a cooler, a control board, a capacitor module, a cover, a case, and a connection busbar. The semiconductor module, the cooler, the control board, and the capacitor module are arranged in an overlapped manner as seen in the direction perpendicular to the top surface of the cooler. The capacitor module has a capacitor cell, a capacitor case, resin, and a capacitor busbar. The capacitor busbar has an inner extending portion, an opening-side extending portion, and an outer extending portion. The connection busbar extends from the connection terminal of the semiconductor module to an outer surface of the outer extending portion and has a part extending in parallel to the extending direction of the outer extending portion. The connection busbar has a capacitor connection portion at an end thereof on the outer extending portion side.

A current sensor is provided on a bus bar via which a reactor is connected to a power module. The reactor is separated from the current sensor by a partition made of metal having a magnetic shielding effect. An output terminal of the reactor is provided on either one of a surface of the reactor on a first side and a surface of the reactor on a second side, the first side being farther from a mounting surface of a power converter across a plane passing through the center of the reactor, the second side being closer to the mounting surface from the plane.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

A modular parallel half-bridge integrated assembly with an annular layout is provided. The assembly includes a plurality of parallel sub-modules to improve a current capacity of the assembly. The sub-modules adopt an annular layout and are connected in parallel to balance currents of the sub-modules. The half-bridge integrated assembly includes a plurality of sub-modules, a plurality of heat sinks, a drive board, a direct current (DC) positive collecting busbar, a DC negative collecting busbar, and an alternating current (AC) collecting busbar. According to the assembly, since each insulated gate bipolar transistor (IGBT) is tightly bound to a capacitor, parasitic inductance of a commutation loop is small, realizing a small voltage overshoot and a fast switching speed for the IGBT module, so as to balance the currents of the sub-modules.

A power module (2) including a molded package (4), three power terminals (6, 8, 10) protruding from a first side (40) of the molded package (4) is disclosed. The power terminals (6, 8, 10) include a positive DC terminal (6), a neutral terminal (8) and a negative terminal (10). The power module (2) includes a phase output power terminal (12) protruding from a second side (42) of the molded package (4). The power module (2) is a three-level power module including a plurality of control pins (14, 16, 18, 20, 22, 24, 26, 28, 30, 32, 34, 36) protruding from the second side (42) of the molded package (4).

In this power conversion device, a DC-DC converter substrate on which a DC-DC converter element is mounted is attached to a base portion along the front surface or back surface of the flat plate-shaped base portion.

This power conversion device includes an inverter, a DC-DC converter, and a flat plate-shaped base where the inverter and the DC-DC converter are disposed on the front side and the back side. The base includes a cooling flow path having a front side flow path disposed on the front side and a back side flow path connected to the front side flow path and disposed on the back side.

A system including a polyphase regulator. In some embodiments, the system includes: a first magnetic element, n switching poles, n being an integer greater than 2, a first port having a first node and a second node, and a second port having a first node and a second node. The first magnetic element may include n phase ports and an averaging port, and each of the n switching poles may include a phase node.

A component is disclosed. In an embodiment a component includes a first region suitable for a feedthrough of at least one bus bar and a second region in which at least one discrete device is arranged, wherein the first region and the second region are separated from one another by a cooling region thermally decoupling the first region from the second region.