An electrostatic chuck device includes: an electrostatic chuck part having, as a main surface, a mounting surface on which a plate-shaped sample is mounted, an electrostatic attraction electrode; a base part configured to cool the electrostatic chuck part; a heater disposed in a layered manner between the electrostatic chuck part and the base part; and an adhesion layer which bonds and integrates the electrostatic chuck part and the base part together, in which the electrostatic chuck part is provided with a first through-hole, the base part is provided with a second through-hole communicating with the first through-hole, the adhesion layer is provided with a third through-hole communicating with the first through-hole and the second through-hole, a tubular insulator is fixed in the second through-hole, and an end of the insulator located on the electrostatic chuck part side is separated from the electrostatic chuck part with a space interposed therebetween.

An electrostatic chuck device includes: an electrostatic chuck part having, as a main surface, a mounting surface on which a plate-shaped sample is mounted, an electrostatic attraction electrode; a base part configured to cool the electrostatic chuck part; a heater disposed in a layered manner between the electrostatic chuck part and the base part; and an adhesion layer which bonds and integrates the electrostatic chuck part and the base part together, in which the electrostatic chuck part is provided with a first through-hole, the base part is provided with a second through-hole communicating with the first through-hole, the adhesion layer is provided with a third through-hole communicating with the first through-hole and the second through-hole, a tubular insulator is fixed in the second through-hole, and an end of the insulator located on the electrostatic chuck part side is separated from the electrostatic chuck part with a space interposed therebetween.

An electrostatic chuck device for adsorbing an object by electrostatic force comprises an adsorption plate that has an adsorption surface to adsorb the object, a gas supplying line that supplies a thermally conductive gas to a gap between the adsorption surface and an adsorbed surface of the object and a pressure calculation section that calculates the pressure of the thermally conductive gas in the gap. The gas supplying line is provided with a flow rate resistive element that serves as a resistance when the thermally conductive gas flows. The pressure calculation section calculates the pressure of the thermally conductive gas in the gap based on the primary side pressure of the flow rate resistive element, the flow rate of the thermally conductive gas passing through the flow rate resistive element and the flow characteristic of the flow rate resistive element.

Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

Systems, apparatus, and methods of manufacturing an article using electroadhesion technology for the pick-up and release of materials, respectively.

Systems, apparatus, and methods of manufacturing an article using electroadhesion technology for the pick-up and release of materials, respectively.

An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

A sample holder includes an insulating substrate, a heat element, a support member, and a bond. The insulating substrate is a ceramic member having a first surface and a second surface opposite to the first surface. The heat element is on the second surface of the insulating substrate. The second surface of the insulating substrate includes a first portion where the heat element is located, a second portion surrounding the first portion, and a groove between the first portion and the second portion. A surface roughness of the first portion is greater than a surface roughness of the second portion.