Patent classifications
H02N13/00
SUBSTRATE FIXING DEVICE
A substrate fixing device includes a base plate having a first through-hole penetrating through the base plate in a thickness direction of the base plate, a ceramic plate adhering to the base plate, having an electrode embedded in the ceramic plate and a second through-hole formed to communicate with the first through-hole, and configured to adsorb an adsorption target object by an electrostatic force that is generated when a voltage is applied to the electrode, an insulating plug arranged at a connection portion in the first through-hole connecting to the second through-hole, and a sealing member attached to the insulating plug and configured to seal a periphery of the connection portion.
Sample holder
A sample holder according to the disclosure includes: an insulating base body in plate form; an electrically conducting member disposed on a lower face of the insulating base body; a lead pin joined to the electrically conducting member so as to extend downwardly from the insulating base body; a tubular member joined to the lower face of the insulating base body so as to surround the lead pin; a first member which is located in an interior of the tubular member and covers a junction between the electrically conducting member and the lead pin, the first member being in a gel form; and a second member which covers the first member and is filled in the interior.
DIELECTRIC FOR ELECTROSTATIC CHUCK
Provided is a dielectric for an electrostatic chuck, which is capable of ensuring sufficient hardness, while ensuring basic properties, such as intrinsic volume resistivity, required for a dielectric for a Johnson-Rahbek type electrostatic chuck. The dielectric has a main crystal phase consisting of corundum, wherein the dielectric includes Al.sub.5BO.sub.9 as another crystal phase, and wherein a ratio I.sub.A/I.sub.B, where I.sub.A denotes a (021) peak intensity of Al.sub.5BO.sub.9 as measured by powder X-ray diffraction, and I.sub.B denotes a (012) peak intensity of corundum as measured by powder X-ray diffraction, is in the range of 0.04 to 0.4.
Handling and processing double-sided devices on fragile substrates
Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.
Handling and processing double-sided devices on fragile substrates
Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.
Electrostatic chuck device and method for manufacturing same
This electrostatic chuck device (1) includes a base (11) having one main surface serving as a mounting surface (19) on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction (13) provided on the side opposite to the mounting surface (19) in the base (11), in which the base (11) consists of a ceramic material as a forming material, and the ceramic material contains aluminum oxide and silicon carbide as main components thereof, and has a layered graphene present at a grain boundary of the aluminum oxide.
Wafer placement device
A wafer placement device includes a wafer placement stage including a wafer electrostatic chuck and a wafer cooling plate, a focus-ring placement stage including a focus-ring electrostatic chuck and a focus-ring cooling plate, and a clamping member arranged around the focus-ring placement stage. The wafer placement stage, the focus-ring placement stage, and the clamping member are separate from one another. A pressing portion of the focus-ring cooling plate presses a wafer cooling plate flange against a mounting plate. The clamping member is fastened to the mounting plate with bolts in a state of pressing a flange against the mounting plate at its flange, thus fixing the wafer placement stage and the focus-ring placement stage to the mounting plate without directly fastening them to the mounting plate.
System and method for improved electrostatic chuck clamping performance
A power supply comprises at least one waveform generator that produces a clamp waveform responsive to a clamp signal, and at least one amplifier that amplifies and provides the clamp waveform to an electrostatic chuck. An advisor module receives parameter values for parameters affecting operation of the power supply, uses a neural network to determine whether the parameter values are consistent with trained parameter values, and continuously and automatically modifies weighting of inputs to the neural network when any parameter values are inconsistent with the trained parameter values. A controller provides the clamp signal to the waveform generator, receives reports from the advisor module, and adjusts the clamp signal or provides a status report when any parameter values are inconsistent with the trained parameter values.
ELECTROSTATIC CHUCK
The present disclosure relates to an electrostatic chuck having an efficient cooling structure. The present disclosure provides an electrostatic chuck including a base substrate including a cooling water channel, and a plate configured to support a wafer on the base substrate and including a plate comprising a cooling gas hole configured to supply a cooling gas to the wafer. The base substrate includes a cooling water inlet and a cooling gas inlet in a center thereof, the plate is in communication with the cooling gas inlet of the base substrate and include a cooling gas hole configured to spray a cooling gas to the wafer, and the electrostatic chuck further includes a shaft abutting the base substrate along a circumference of a central portion of the base substrate including the cooling water inlet and the cooling gas inlet.
ELECTROSTATIC CHUCK
The present disclosure relates to an electrostatic chuck having an efficient cooling structure. The present disclosure provides an electrostatic chuck including a base substrate including a cooling water channel, and a plate configured to support a wafer on the base substrate and including a plate comprising a cooling gas hole configured to supply a cooling gas to the wafer. The base substrate includes a cooling water inlet and a cooling gas inlet in a center thereof, the plate is in communication with the cooling gas inlet of the base substrate and include a cooling gas hole configured to spray a cooling gas to the wafer, and the electrostatic chuck further includes a shaft abutting the base substrate along a circumference of a central portion of the base substrate including the cooling water inlet and the cooling gas inlet.