A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.

A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.

An attachment and detachment device that excels in responsiveness to attachment and detachment of a workpiece even when the workpiece is thin while utilizing an electrostatic chuck method is provided. The attachment and detachment device that enables suction and separation of a workpiece includes a machinable ceramic layer, an adhesion activating layer provided on the machinable ceramic layer, an electrode layer provided on the adhesion activating layer, and a dielectric layer provided on the electrode layer, wherein the electrode layer is covered with the adhesion activating layer and the dielectric layer, and the dielectric layer has a volume resistivity of 10.sup.9 to 10.sup.12 Ω.Math.cm.

An attachment and detachment device that excels in responsiveness to attachment and detachment of a workpiece even when the workpiece is thin while utilizing an electrostatic chuck method is provided. The attachment and detachment device that enables suction and separation of a workpiece includes a machinable ceramic layer, an adhesion activating layer provided on the machinable ceramic layer, an electrode layer provided on the adhesion activating layer, and a dielectric layer provided on the electrode layer, wherein the electrode layer is covered with the adhesion activating layer and the dielectric layer, and the dielectric layer has a volume resistivity of 10.sup.9 to 10.sup.12 Ω.Math.cm.

A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.

A method of generating an electrostatic attraction force includes an application of an insulating surface, wherein the insulating surface separates electrode arrays and the electrode arrays positioned in at least two different axes and providing an adhesion with an help of the electrostatic attraction force, wherein a matrix array is formed for an electrostatic attraction force region to provide gravity to at least one of objects, at a desired point and a number of electrodes is generated by feeding with a DC voltage and/or an AC voltage at desired points and at a desired force, wherein at least two objects adhere with the electrostatic attraction force.

A method of generating an electrostatic attraction force includes an application of an insulating surface, wherein the insulating surface separates electrode arrays and the electrode arrays positioned in at least two different axes and providing an adhesion with an help of the electrostatic attraction force, wherein a matrix array is formed for an electrostatic attraction force region to provide gravity to at least one of objects, at a desired point and a number of electrodes is generated by feeding with a DC voltage and/or an AC voltage at desired points and at a desired force, wherein at least two objects adhere with the electrostatic attraction force.

According to one embodiment, an electrostatic chuck includes a ceramic dielectric, a base plate, a first electrode layer, and a second electrode layer. The ceramic dielectric substrate has a first major surface and a second major surface. The first electrode layer is provided between the first major surface and the second major surface. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer has a first surface and a second surface. A distance between the first surface and the first major surface is constant. A distance between the second surface and the first surface at an end portion of the first electrode layer is shorter than a distance between the second surface and the first surface at a central portion of the first electrode layer.

According to one embodiment, an electrostatic chuck includes a ceramic dielectric, a base plate, a first electrode layer, and a second electrode layer. The ceramic dielectric substrate has a first major surface and a second major surface. The first electrode layer is provided between the first major surface and the second major surface. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer has a first surface and a second surface. A distance between the first surface and the first major surface is constant. A distance between the second surface and the first surface at an end portion of the first electrode layer is shorter than a distance between the second surface and the first surface at a central portion of the first electrode layer.

An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.