Holding apparatus 100 for electrostatic holding component 1 (e.g., semiconductor wafer), includes base body 10 with at least one plate 10A, protruding burls 11 on upper side of plate and end faces 12 of which span a burls support plane for supporting component, and electrode device 20 in layered form in spacings between burls and insulator layer 21 which is connected to plate, dielectric layer 23 of inorganic dielectric and electrode layer 22 between insulator and dielectric layers. Between burls support plane and dielectric layer upper side, predetermined gap spacing A is set. Electrode device has openings 24 and is on plate upper side between burls, which protrude therethrough. Insulator layer includes inorganic dielectric and is connected with adhesive 13 to base body upper side between burls. Electrode device is embedded in adhesive. Spacing between burls and electrode device is filled with adhesive. A production method is also described.

Holding apparatus 100 for electrostatic holding component 1 (e.g., semiconductor wafer), includes base body 10 with at least one plate 10A, protruding burls 11 on upper side of plate and end faces 12 of which span a burls support plane for supporting component, and electrode device 20 in layered form in spacings between burls and insulator layer 21 which is connected to plate, dielectric layer 23 of inorganic dielectric and electrode layer 22 between insulator and dielectric layers. Between burls support plane and dielectric layer upper side, predetermined gap spacing A is set. Electrode device has openings 24 and is on plate upper side between burls, which protrude therethrough. Insulator layer includes inorganic dielectric and is connected with adhesive 13 to base body upper side between burls. Electrode device is embedded in adhesive. Spacing between burls and electrode device is filled with adhesive. A production method is also described.

A power supply comprises at least one waveform generator that produces a clamp waveform responsive to a clamp signal, and at least one amplifier that amplifies and provides the clamp waveform to an electrostatic chuck. An advisor module receives parameter values for parameters affecting operation of the power supply, uses a neural network to determine whether the parameter values are consistent with trained parameter values, and continuously and automatically modifies weighting of inputs to the neural network when any parameter values are inconsistent with the trained parameter values. A controller provides the clamp signal to the waveform generator, receives reports from the advisor module, and adjusts the clamp signal or provides a status report when any parameter values are inconsistent with the trained parameter values.

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.

The present disclosure provides an electrostatic chuck device capable of uniformly cooling or heating a fixedly adsorbed substrate. The electrostatic chuck device includes an electrostatic chuck plate, a bonding layer, and a base. The bonding layer has a bonding agent bonded to a rear surface of the electrostatic chuck plate. The base has a bonding surface bonded to the bonding layer and a plurality of protrusions radially extending from a central part toward an outer circumferential surface of the bonding surface. The ends of the respective protrusions on the central part may be arranged at intervals.

The present disclosure provides an electrostatic chuck device capable of uniformly cooling or heating a fixedly adsorbed substrate. The electrostatic chuck device includes an electrostatic chuck plate, a bonding layer, and a base. The bonding layer has a bonding agent bonded to a rear surface of the electrostatic chuck plate. The base has a bonding surface bonded to the bonding layer and a plurality of protrusions radially extending from a central part toward an outer circumferential surface of the bonding surface. The ends of the respective protrusions on the central part may be arranged at intervals.

An electrostatic chuck fixes a substrate and includes a first area and a second area adjacent to the first area. The electrostatic chuck includes a first electrode portion disposed in the first area and a second electrode portion disposed in the second area. The first electrode portion has a first width, and the second electrode portion has a second width smaller than the first width.

An electrostatic chuck fixes a substrate and includes a first area and a second area adjacent to the first area. The electrostatic chuck includes a first electrode portion disposed in the first area and a second electrode portion disposed in the second area. The first electrode portion has a first width, and the second electrode portion has a second width smaller than the first width.

An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.