Certain aspects of the present disclosure provide an apparatus for grasping an object. The apparatus includes a substrate comprising a plurality of electrode pixels; and a controller configured to energize each electrode pixel of the plurality of electrode pixels individually, wherein the apparatus is configured to grasp an object electrostatically using the substrate.

Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al.sub.2O.sub.3), aluminum nitride (AlN), yttrium oxide (Y.sub.2O.sub.3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al.sub.2O.sub.3), aluminum nitride (AlN), yttrium oxide (Y.sub.2O.sub.3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

A substrate support assembly comprises a plurality of zones, a chuck comprising a ceramic body, and an additional assembly bonded to a lower surface of the chuck. The additional assembly comprises a second body and a plurality of temperature sensors disposed in or on the second body, wherein each zone of the plurality of zones includes at least one of the plurality of temperature sensors. A plurality of spatially tunable heating elements are disposed a) in or on the ceramic body or b) in or on the second body.

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater plate. The ceramic dielectric substrate has a surface where a processing object is placed. The base plate supports the ceramic dielectric substrate. The heater plate is provided between the ceramic dielectric substrate and the base plate. The heater plate includes a first support plate including a metal, a second support plate including a metal, a heater element, a first resin layer, and a second resin layer. The heater element is provided between the first support plate and the second support plate. The heater element emits heat due to a current flowing. The first resin layer is provided between the first support plate and the heater element. The second resin layer is provided between the second support plate and the heater element.

An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

A semiconductor manufacturing apparatus includes: a metal base member fixed to a surface, on the opposite side of a wafer mounting surface, of an electrostatic chuck; an electrode terminal connected to an electrode embedded in the electrostatic chuck; a through hole provided at a position of the base member, the position being opposed to the electrode terminal; an insulating sleeve fixed to the inner circumferential surface of the through hole; a chuck-side terminal which is connected to the electrode terminal via a flexible cable, and fixed to the insulating sleeve with arranged in the insulating sleeve; a flexible insulating tube that covers the cable, the flexible insulating tube having one end fixed to the electrode terminal and the other end fixed to the chuck-side terminal; and an insulating resin member that covers at least part of the electrode terminal, the part being not covered by the insulating tube.

A semiconductor manufacturing apparatus includes: a metal base member fixed to a surface, on the opposite side of a wafer mounting surface, of an electrostatic chuck; an electrode terminal connected to an electrode embedded in the electrostatic chuck; a through hole provided at a position of the base member, the position being opposed to the electrode terminal; an insulating sleeve fixed to the inner circumferential surface of the through hole; a chuck-side terminal which is connected to the electrode terminal via a flexible cable, and fixed to the insulating sleeve with arranged in the insulating sleeve; a flexible insulating tube that covers the cable, the flexible insulating tube having one end fixed to the electrode terminal and the other end fixed to the chuck-side terminal; and an insulating resin member that covers at least part of the electrode terminal, the part being not covered by the insulating tube.

The power supply apparatus for the electrostatic chuck of this invention has: DC power source units for applying DC voltage to electrodes of the electrostatic chuck; and an AC power source unit for causing AC current to flow through an electrostatic capacitance of the electrostatic chuck. Provided that: a circuit for charging an electrode, from DC power source unit, with chuck voltage in order to attract and hold in position the to-be-processed substrate with the electrostatic chuck, be defined as a first circuit and that; a circuit for clearing charges of the to-be-processed substrate be defined as a second circuit, the power supply apparatus further includes switching means for switching between the first circuit and the second circuit. The second circuit is provided with an AC power source unit and a voltmeter for measuring AC voltage.