The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same V.sub.DS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same V.sub.GS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both V.sub.GS and V.sub.DS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

Techniques are disclosed relating to rapidly downshifting the output frequency of an oscillator. In some embodiments, the oscillator is configured to operate in a closed-loop mode in which negative feedback is used to maintain a particular output frequency (e.g., in a phase-locked loop (PLL)). In some embodiments, the negative feedback loop is configured to maintain the output of the oscillator at a particular frequency based on a reference clock signal and the output of the oscillator. The nature of a negative feedback loop may render rapid frequency changes difficult, e.g., because of corrections by the loop. Therefore, in some embodiments, the loop is configured to switch to an open-loop mode in which a control input to the oscillator is fixed. In some embodiments, the loop switches to open-loop mode in response to a trigger signal and control circuitry forces the oscillator to a new target frequency.

A circuit includes an oscillator having a driver and a resonator. The driver receives a supply voltage at a supply input and provides a drive output to drive the resonator to generate an oscillator output signal. A power converter receives an input voltage and generates the supply voltage to the supply input of the driver. The power converter varies the supply voltage based on an adjust command supplied to a command input of the power converter. A detector monitors a voltage level of the oscillator output signal. A controller sets the adjust command to the power converter to control the supply voltage to the supply input of the driver such that the voltage level of the oscillator output signal is set at or above a predetermined threshold voltage.

An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.

A transmitter is provided with a plurality of pull-up legs and a plurality of pull-down legs. A controller controls the pull-up legs and the pull-down legs so that a constant output impedance is provided while supporting a range of logic-high output voltages.

Disclosed herein are tunable reactance circuits configured to present a tunable or variable capacitive reactance when energized. The circuits can include a switch configured to be controlled by a gate driver, the gate driver configured to receive a control signal indicating an on-time of the switch; a diode coupled antiparallel to a switch; and one or more capacitors coupled in parallel to the diode. The tunable capacitive reactance can be based on the on-time of the switch and a total capacitance value of the one or more capacitors. The exemplary tunable reactance circuits may be used in wireless power transmitters and/or receivers for efficient power transmission and/or to deliver a particular level of power to a load.

Transformer-driven power switch devices are provided for switching high currents. These devices include power switches, such as Gallium Nitride (GaN) transistors. Transformers are used to transfer both control timing and power for controlling the power switches. These transformers may be coreless, such that they may be integrated within a silicon die. Rectifiers, pulldown control circuitry, and related are preferably integrated in the same die as a power switch, e.g., in a GaN die, such that a transformer-driven switch device is entirely comprised on a silicon die and a GaN die, and does not necessarily require a (large) cored transformer, auxiliary power supplies, or level shifting circuitry.

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.