This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

Exemplary embodiments of the disclosure are related to inductors, e.g., at least a pair of planar inductors, for wireless communication apparatus, for example transceivers used in a wireless device. A device may include a first planar inductor configured on a first area of a substrate. The first planar inductor includes a first loop configured to produce a first magnetic field in a first direction and a second loop configured to produce a second magnetic field in a second direction. The device further includes a second planar inductor configured on a second area of the substrate. The second planar inductor includes a third loop configured to produce a third magnetic field in a third direction and a fourth loop configured to produce a fourth magnetic field in a fourth direction. The second area may at least partially overlap the first area.

Exemplary embodiments of the disclosure are related to inductors, e.g., at least a pair of planar inductors, for wireless communication apparatus, for example transceivers used in a wireless device. A device may include a first planar inductor configured on a first area of a substrate. The first planar inductor includes a first loop configured to produce a first magnetic field in a first direction and a second loop configured to produce a second magnetic field in a second direction. The device further includes a second planar inductor configured on a second area of the substrate. The second planar inductor includes a third loop configured to produce a third magnetic field in a third direction and a fourth loop configured to produce a fourth magnetic field in a fourth direction. The second area may at least partially overlap the first area.

An oscillator includes a spin current source, and a free layer coupled to the spin current source. The free layer has a magnetization hard axis that is parallel to a quantization axis of a spin current injected by the spin Hall effect of the spin current source.

Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength H.sub.sig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.

A nano-oscillator magnetic wave propagation system has a group of aggregated spin-torque nano-oscillators (ASTNOs), which share a magnetic propagation material. Each of the group of ASTNOs is disposed about an emanating point in the magnetic propagation material. During a non-wave propagation state of the nano-oscillator magnetic wave propagation system, the magnetic propagation material receives a polarizing magnetic field. During a wave propagation state of the nano-oscillator magnetic wave propagation system, each of the group of ASTNOs initiates spin waves through the magnetic propagation material, such that a portion of the spin waves initiated from each of the group of ASTNOs combine to produce an aggregation of spin waves emanating from the emanating point. The aggregation of spin waves may provide a sharper wave front than wave fronts of the individual spin waves initiated from each of the group of ASTNOs.

A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.

Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density J.sub.O for oscillation, to a magnetoresistive effect element for a time T.sub.P, and then executes a second step of applying a current, which has a second current density J.sub.S smaller than the first current density and not smaller than the critical current density J.sub.O for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time T.sub.P in the first step is J.sub.P, a critical current density for magnetization reversal of the magnetoresistive effect element is J.sub.R, and a magnetization reversal time of the magnetoresistive effect element is T.sub.R: $\begin{array}{cc}\frac{0.1\times T_R\left(J_R-J_O\right)}{J_p-J_S}<T_p<0.9\times T_R\frac{J_R-J_O}{J_S-J_O}& \end{array}$