There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe.sub.2TiSi.

Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength H.sub.sig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.

The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and magnetic droplet-skyrmions and report on their rich dynamical properties. Micromagnetic simulations identify the conditions necessary to nucleate and drive droplet-skyrmions over a wide range of currents and fields. Micromagnetic simulations also demonstrate how droplets and droplet-skyrmions can be used as skyrmion injectors and detectors in skyrmion-based magnetic memories. The droplet-skyrmion can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, skyrmionics, and PMA-based domain-wall devices.

A spin torque oscillation generator includes a spin reference layer and a spin oscillation layer. The spin reference layer has a first magnetization direction. The spin reference layer is configured to receive a current and generate a spin-polarized current. The spin oscillation layer has a second magnetization direction. The second magnetization direction is different than the first magnetization direction. The spin oscillation layer is configured to receive the spin-polarized current from the spin reference layer. The spin-polarized current generates a spin torque based on the second magnetization direction of the spin oscillation layer. The spin torque generates a spin torque output signal.

An array of magnetic nanoparticle (MNP) spin torque oscillators (STOs) is described. Each STO is comprised of a uniform, chemically synthesized, spherical nanoparticle which couples to current flowing along a surface. The particles are organized into an array by a self-assembly technique with uniform spacing and close proximity to allow strong electrical and magnetic coupling between particles. The coupling of the nanoparticles to the surface current drives the oscillations by spin-torque, and for phase locking and data input. The uniform, spherical shape of the particles allows the oscillations to be achieved at low currents and with low power dissipation. The MNP-STOs may be used as a basis for massively parallel computing, microwave oscillators, or other applications.

An array of magnetic nanoparticle (MNP) spin torque oscillators (STOs) is described. Each STO is comprised of a uniform, chemically synthesized, spherical nanoparticle which couples to current flowing along a surface. The particles are organized into an array by a self-assembly technique with uniform spacing and close proximity to allow strong electrical and magnetic coupling between particles. The coupling of the nanoparticles to the surface current drives the oscillations by spin-torque, and for phase locking and data input. The uniform, spherical shape of the particles allows the oscillations to be achieved at low currents and with low power dissipation. The MNP-STOs may be used as a basis for massively parallel computing, microwave oscillators, or other applications.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.