The present invention relates to a radiofrequency oscillator comprising an optical resonator being a ring waveguide allowing the propagation of a first wave in a first direction and of a second wave in a second direction, the second direction being opposite to the first direction, and the resonator comprising an active optical medium generating a first optical line from the first wave and a second optical line from the second wave, the resonator being in contact with a part made of a material featuring a magneto-optic effect, an applier of external magnetic field of adjustable intensity on the resonator generating a frequency offset between the first wave and the second wave, and a processing circuit converting the beat between the two optical lines in a radiofrequency signal.

A Fourier domain mode-locked optoelectronic oscillator includes a laser light source, a phase modulator, an optical notch filter, a photodetector, an electrical amplifier and a power divider; wherein the laser light source, the phase modulator, the optical notch filter and the photodetector together form a swept microwave photonic filter. The passband of the swept microwave photonic filter is determined by the difference in wavelength corresponding to the laser light source and the notch positions of the optical notch filter. In the present disclosure, the laser light source, the phase modulator, the optical notch filter, and the photodetector are configured to form a fast swept microwave photonic filter, the sweeping of a passband of the microwave photonic filter is realized by the sweeping of the laser light source or the optical notch filter, and the change in the filter's passband is matched with the latency for delivering a signal in the optoelectronic oscillator loop for one trip. As such, Fourier domain mode locking is realized, and a broadband adjustable chirped microwave signal can be output.

A quantum interference device includes a light emitting element; and an atomic cell on which light from the light emitting element is incident. The atomic cell accommodates alkali metal atoms therein, and a coating film containing a polydiyne compound or a polydiene compound is disposed on an inner wall of the atomic cell.

A quantum interference device includes a light emitting element; and an atomic cell on which light from the light emitting element is incident. The atomic cell accommodates alkali metal atoms therein, and a coating film containing a polydiyne compound or a polydiene compound is disposed on an inner wall of the atomic cell.

In some embodiments, two light beams having different frequencies can be counter-propagated through an atomic absorber having an atomic transition frequency approximately equal to the sum of the frequencies of the two beams. When the beams are appropriately tuned, the atomic absorber absorbs significant amount of light of at least the lower power beam. The amount of light remaining after the absorber is an indication of how well the frequencies are tuned to the absorber. At least one of the beam frequencies has an FM modulation applied prior to the absorber. This means the phase of the remaining light compared to the FM modulation, along with the intensity of the remaining light, can be used to provide a first feedback signal to adjust the frequencies of the beams to match the absorber frequency. Finally, both beams have amplitude modulation applied before the absorber. Comparing the response of the first feedback signal to the AM modulation frequency generates an intensity ratio feedback signal used to adjust the power of at least one of the beams and realize the zero light shift condition.

In some embodiments, two light beams having different frequencies can be counter-propagated through an atomic absorber having an atomic transition frequency approximately equal to the sum of the frequencies of the two beams. When the beams are appropriately tuned, the atomic absorber absorbs significant amount of light of at least the lower power beam. The amount of light remaining after the absorber is an indication of how well the frequencies are tuned to the absorber. At least one of the beam frequencies has an FM modulation applied prior to the absorber. This means the phase of the remaining light compared to the FM modulation, along with the intensity of the remaining light, can be used to provide a first feedback signal to adjust the frequencies of the beams to match the absorber frequency. Finally, both beams have amplitude modulation applied before the absorber. Comparing the response of the first feedback signal to the AM modulation frequency generates an intensity ratio feedback signal used to adjust the power of at least one of the beams and realize the zero light shift condition.

What is described is a high-frequency integrated circuit provided on a III-V compound semiconductor, wherein an emitting device is radiation-coupled with the integrated circuit such that the emitting device irradiates the integrated circuit, and wherein the integrated circuit has at least one of an oscillator, a mixer, a phase shifter, a frequency divider or an amplifier.

What is described is a high-frequency integrated circuit provided on a III-V compound semiconductor, wherein an emitting device is radiation-coupled with the integrated circuit such that the emitting device irradiates the integrated circuit, and wherein the integrated circuit has at least one of an oscillator, a mixer, a phase shifter, a frequency divider or an amplifier.

Oscillators and methods for realignment of an oscillator are provided. An oscillator includes an inductor having first and second terminals and a capacitor electrically coupled in parallel to the inductor at the first and second terminals. A first transistor of a first conductivity type is electrically coupled to the first terminal and a voltage source. The first transistor includes a gate configured to receive a first realignment signal. When the first realignment signal is in a realignment state, the first transistor is turned on and a voltage of the first terminal is increased from a low level to a high level in order to align a phase of a waveform of the oscillator.

Oscillators and methods for realignment of an oscillator are provided. An oscillator includes an inductor having first and second terminals and a capacitor electrically coupled in parallel to the inductor at the first and second terminals. A first transistor of a first conductivity type is electrically coupled to the first terminal and a voltage source. The first transistor includes a gate configured to receive a first realignment signal. When the first realignment signal is in a realignment state, the first transistor is turned on and a voltage of the first terminal is increased from a low level to a high level in order to align a phase of a waveform of the oscillator.