An acoustic wave force field generator array that uses a plurality of synchronized oscillating emitters system that effectively blocks noise from passing through an acoustic barrier of wave/bubble pattern forms generated by the rapid oscillation of the integrated magnet and emitter system. The movement of the magnets also produces an EM field that generates a current to at least partially power the driver and speaker systems.

A resonator device includes a resonator element, a package that accommodates the resonator element, a temperature control element arranged on a first surface of the package, and a circuit part arranged on a second surface of the package that faces away from the first surface.

A resonator device includes a resonator element, a package that accommodates the resonator element, a temperature control element arranged on a first surface of the package, and a circuit part arranged on a second surface of the package that faces away from the first surface.

Apparatuses and methods for phase interpolators are provided. An example apparatus comprises a phase interpolator and a controller coupled to the phase interpolator. The controller is configured to provide a digital timing code to the phase interpolator, and the phase interpolator is configured to apply a correction to the received digital timing code based, at least in part, on phase interpolator error correction data from a data structure containing phase interpolator error correction data.

Apparatuses and methods for phase interpolators are provided. An example apparatus comprises a phase interpolator and a controller coupled to the phase interpolator. The controller is configured to provide a digital timing code to the phase interpolator, and the phase interpolator is configured to apply a correction to the received digital timing code based, at least in part, on phase interpolator error correction data from a data structure containing phase interpolator error correction data.

The present invention relates to a method of simulating an initial component of a signal to approximate a component of a reference signal, the method characterized by the steps of: i. generating a source signal which includes at least one harmonic component, and ii. determining the average amplitude and duration of the source signal, and iii. referencing the amplitude of the reference signal component to be simulated, and iv. integrating the source signal over a period of time sufficient to produce a value for the signal component amplitude approximate to the reference signal component amplitude.

The present invention relates to a method of simulating an initial component of a signal to approximate a component of a reference signal, the method characterized by the steps of: i. generating a source signal which includes at least one harmonic component, and ii. determining the average amplitude and duration of the source signal, and iii. referencing the amplitude of the reference signal component to be simulated, and iv. integrating the source signal over a period of time sufficient to produce a value for the signal component amplitude approximate to the reference signal component amplitude.

A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

What is described is a high-frequency integrated circuit provided on a III-V compound semiconductor, wherein an emitting device is radiation-coupled with the integrated circuit such that the emitting device irradiates the integrated circuit, and wherein the integrated circuit has at least one of an oscillator, a mixer, a phase shifter, a frequency divider or an amplifier.