A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

A magnetic operational amplifier having a differential stage includes a first magnetic field effect transistor MAGFET and a differential signal conditioner, the differential signal conditioner including a load stage, a differential input pair connected to the load stage and a biasing current source connected to the differential input pair; the magnetic field effect transistor MAGFET being connected to the load stage as a second differential input pair and the differential signal conditioner including a second biasing current source connected to the magnetic field effect transistor MAGFET.

A magnetic operational amplifier having a differential stage includes a first magnetic field effect transistor MAGFET and a differential signal conditioner, the differential signal conditioner including a load stage, a differential input pair connected to the load stage and a biasing current source connected to the differential input pair; the magnetic field effect transistor MAGFET being connected to the load stage as a second differential input pair and the differential signal conditioner including a second biasing current source connected to the magnetic field effect transistor MAGFET.

An amplifier includes a graphene Hall sensor (GHS). The GHS includes a graphene layer formed above a substrate, a dielectric structure formed above a channel portion of the graphene layer, and a conductive gate structure formed above at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage. The GHS also includes first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current. The GHS further includes first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer. The amplifier also includes a current sense amplifier (CSA) coupled to the GHS. The CSA senses current output from the GHS.

At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.