A signal generation unit 2, a DA converter 3, variable attenuators 40, 42, 44, and 46, a measurement unit 6 that detects a level of the signal attenuated by the variable attenuators 40, 42, 44, and 46 and passed through one or more semiconductor components, a switch 48 that switches between an Internal path through which the signal attenuated by the variable attenuator 40, 42, 44, and 46 is transmitted to the measurement unit 6 and an External path through which the signal attenuated by the variable attenuator 40, 42, 44, and 46 is output from an output terminal 10, and a control unit 7 that obtains a correction value of an attenuation amount of the variable attenuators 40, 42, and 44 with the Internal path and obtains a correction value of an attenuation amount of the variable attenuator 46 with the External path.

An amplifier circuit including a first folded double cascode stage configured to receive a differential input signal at a first pair of input transistors and generate a first drive signal, a second folded double cascode stage configured to receive the differential input signal at a second pair of input transistors and generate a second drive signal, and an output stage. The output stage includes a PMOS common-source output transistor configured to receive the first drive signal at its gate, and an NMOS common-source output transistor configured to receive the first drive signal at its gate, the PMOS common-source output transistor and NMOS common-source output transistor being jointly configured to generate an output signal based on the first drive signal and the second drive signal.

A clamping circuit that may be used to provide efficient and effective voltage clamping in an RF front end. The clamping circuit comprises two series coupled signal path switches and a bypass switch coupled in parallel with the series coupled signal path switches. A diode is coupled from a point between the series coupled signal path switches to a reference potential. In addition, an output selection switch within an RF front end has integrated voltage clamping to more effectively clamp the output voltage from the RF front end. Additional output clamping circuits can be used at various places along a direct gain signal path, along an attenuated gain path and along a bypass path.

In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

An apparatus includes: an input coupler configured to receive an input voltage and output a first coupled voltage and a second coupled voltage in accordance with a first bias voltage and a second bias voltage, respectively; a stacked amplifier pair configured to receive the first coupled voltage and the second coupled voltage and output a first output voltage and a second output voltage in accordance with a first DC voltage, a second DC voltage, and a third DC voltage; and an output combiner configured to establish a combined output voltage in accordance with a combination of the first output voltage and the second output voltage, wherein the stacked amplifier pair includes a first amplifier operating with a power supplied from the second DC voltage to the first DC voltage and a second amplifier operating with a power supplied from the third DC voltage to the second DC voltage.

An apparatus includes: an input coupler configured to receive an input voltage and output a first coupled voltage and a second coupled voltage in accordance with a first bias voltage and a second bias voltage, respectively; a stacked amplifier pair configured to receive the first coupled voltage and the second coupled voltage and output a first output voltage and a second output voltage in accordance with a first DC voltage, a second DC voltage, and a third DC voltage; and an output combiner configured to establish a combined output voltage in accordance with a combination of the first output voltage and the second output voltage, wherein the stacked amplifier pair includes a first amplifier operating with a power supplied from the second DC voltage to the first DC voltage and a second amplifier operating with a power supplied from the third DC voltage to the second DC voltage.

The present invention is directed to electrical circuits and techniques thereof. More specifically, an embodiment of the present invention provides a variable gain amplifier that includes a first transistor and a second transistor whose gate terminals are coupled to a first input terminal. A first drain terminal of the first transistor and a first source terminal of the second transistor is coupled to a voltage gain control switch. There are other embodiments as well.

An apparatus includes a radio-frequency (RF) receiver. The RF receiver includes a single-balanced passive mixer driven by the output of a low noise amplifier (LNA) and a passive filter driven by an output of the single-balanced passive mixer. The RF receiver further includes a programmable gain amplifier (PGA) having an input resistance that generates noise, where the PGA is driven by an output of the passive filter, and the noise generated by the input resistance of the PGA is suppressed.

A power amplifier module includes a first bipolar transistor configured to amplify a radio frequency signal and output an amplified signal and a second bipolar transistor. A base of the second bipolar transistor is supplied with a control voltage for controlling attenuation of the radio frequency signal, and a collector the second bipolar transistor is supplied with a source voltage. The power amplifier module also includes a first resistor, where one end of the first resistor is connected to a supply path of the radio frequency signal to the first bipolar transistor, and a capacitor, where one end of the capacitor is connected to the other end of the first resistor and the other end of the capacitor is connected to the collector of the second bipolar transistor.

A power amplifier with supply switching is provided. The power amplifier detects a magnitude of an outgoing broadband communication signal and determines whether the magnitude exceeds a predetermined voltage threshold. The power amplifier applies a first gain to the outgoing broadband communication signal using a first voltage supply rail when it is determined that the magnitude exceeds the predetermined voltage threshold and a second gain using a second voltage supply rail that is smaller than the first voltage supply rail when it is determined that the magnitude does not exceed the predetermined voltage threshold. The power amplifier produces an output signal from the outgoing broadband communication signal with the applied first gain or the applied second gain, wherein a current of the outgoing broadband communication signal is switched between the first voltage supply rail and the second voltage supply rail in response to the magnitude being detected.