The present invention relates to a signal processing apparatus and method, a program, and a data recording medium configured such that the playback level of an audio signal can be easily and effectively enhanced without requiring prior analysis. An analyzer 21 generates mapping control information in the form of the root mean square of samples in a given segment of a supplied audio signal. A mapping processor 22 takes a nonlinear function determined by the mapping control information taken as a mapping function, and conducts amplitude conversion on a supplied audio signal using the mapping function. In this way, by conducting amplitude conversion of an audio signal using a nonlinear function that changes according to the characteristics in respective segments of an audio signal, the playback level of an audio signal can be easily and effectively enhanced without requiring prior analysis. The present invention may be applied to portable playback apparatus.

A power amplifier module includes a first bipolar transistor configured to amplify a radio frequency signal and output an amplified signal and a second bipolar transistor. A base of the second bipolar transistor is supplied with a control voltage for controlling attenuation of the radio frequency signal, and a collector the second bipolar transistor is supplied with a source voltage. The power amplifier module also includes a first resistor, where one end of the first resistor is connected to a supply path of the radio frequency signal to the first bipolar transistor, and a capacitor, where one end of the capacitor is connected to the other end of the first resistor and the other end of the capacitor is connected to the collector of the second bipolar transistor.

An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

Switchable feedback circuit for radio-frequency (RF) power amplifiers. In some embodiments, an RF power amplifier (PA) circuit can include a transistor having a base, a collector, and an emitter. The transistor can be configured to amplify an RF signal. The RF PA circuit can further include a switchable feedback circuit implemented between the collector and the base. The switchable feedback circuit can be configured to provide a plurality of resistance values between the collector and the base. Such a PA circuit can be implemented in products such as a die, a module, and a wireless device.

The disclosure provides an amplifier. The amplifier includes a first transistor that receives a first input. A second transistor receives a second input. A plurality of impedance networks is coupled between the first transistor and the second transistor. At least one impedance network of the plurality of impedance networks includes a first impedance path and a second impedance path. The first impedance path is activated during single ended operation, and the second impedance path is activated during differential operation.

Embodiments of circuits for use with an amplifier that includes multiple amplifier paths include a first circuit and a second circuit in parallel with the first circuit. The first circuit includes a first input coupled to a first power divider output, a first output coupled to a first amplifier path of the multiple amplifier paths, and a first adjustable phase shifter and a first attenuator series coupled between the first input and the first output. The second circuit includes a second input coupled to a second power divider output, a second output coupled to a second amplifier path of the multiple amplifier paths, and a second adjustable phase shifter coupled between the second input and the second output.

Disclosed is a differential transimpedance amplifier. The differential transimpedance amplifier includes a common gate amplifier configured to receive an electrical signal from an input node, and a common source amplifier configured to have a feedback resistor and receive the electrical signal form the input node, wherein an output signal of the common gate amplifier and an output signal of the common source amplifier form a differential signal pair.

One aspect of this disclosure is a transimpedance amplifier circuit with multiple resistive feedback loops can be implemented with multiple Kelvin sensing channels. A transimpedance amplifier and multiple Kelvin sensing channels can be implemented on a single die having multiple contacts, such as pins, for connecting multiple resistors to the Kelvin sensing channels. The Kelvin sensing channels can be implemented with T-junction switch networks in certain embodiments.

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using structures configured to cooperatively control a common semi-conductive channel region (SCR). One embodiment includes providing a metal oxide semiconductor field effect transistor (MOSFET) section formed with an exemplary SCR and two junction field effect transistor (JFET) gates on opposing sides of the MOSFET's SCR such that operation of the JFET modulates or controls current through the MOSFET's. With two JFET gate terminals to modulate various embodiments' signal(s), an improved mixer, demodulator, and gain control element in, e.g., analog circuits can be realized. Additionally, a direct current (DC)-biased terminal of one embodiment decreases cross-talk with other devices. A lens structure can also be incorporated into MOSFET structures to further adjust operation of the MOSFET. An embodiment can also include a current leakage mitigation structure configured to reduce or eliminate current leakage between MOSFET and JFET structures.

Apparatus (301) for switchable attenuation of a differential input signal from a microphone includes positive and negative non-attenuating paths (406, 410) have n- and p-type MOSFETs (421, 422, 423, 424) in back-to-back configurations; positive and negative attenuating paths (405, 409) have n- and p-type MOSFETs (415, 416, 418, 419) in back-to-back configurations in combination with resistors; a gate driver (425) applies a drive signal of one polarity (QNEG) to gates of the n-type MOSFETs in the attenuating paths and the p-type MOSFETs in the non-attenuating paths, and a drive signal of opposite polarity (QPOS) to the gates of the p-type MOSFETs in the attenuating paths and the n-type MOSFETs in the non-attenuating paths; and the state of the MOSFETs depends on the drive signals at their gates, and thus the input signal may be routed via either the non-attenuating paths or the attenuating paths by controlling the drive signals.