A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe.sub.X.sub.1-. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and satisfies 0<y<1.

Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.

Described is a frequency selective canceler, which uses signals reflected from a reflective element (e.g. a frequency selective limiter) to selectively reject only signals having a power level above a threshold power level while simultaneously allowing signals having a power level below the threshold power level to pass without rejection.