An integrated circuit (IC) including a first transceiver interface circuit extending longitudinally in a first direction substantially perpendicular to a second direction parallel to edge of the IC, wherein the first transceiver interface circuit comprises a first T-coil; and a second transceiver interface circuit extending longitudinally in the first direction, wherein the second transceiver interface circuit is staggered from the first transceiver interface circuit along the second direction, wherein the second transceiver interface circuit includes a second T-coil, and wherein the second T-coil is offset from the first T-coil along the first direction.

Disclosed is a microwave cavity resonator used as a phase change (phase modulation) to intensity change (intensity or amplitude modulation) converter. Certain aspects and embodiments include resonant circuits, such as a resistor, inductor and capacitor (RLC) circuit. Certain aspects and embodiments convert changes in phase to changes in output voltage to perform analog demodulation of a phase modulated microwave carrier. Certain aspects and embodiments use resonance when the reactive components of the circuit (capacitive and inductive components) are equal in magnitude and 180 degrees out of phase with one another, thereby cancelling out the reactance component of the circuit's impedance.

Disclosed is a microwave cavity resonator used as a phase change (phase modulation) to intensity change (intensity or amplitude modulation) converter. Certain aspects and embodiments include resonant circuits, such as a resistor, inductor and capacitor (RLC) circuit. Certain aspects and embodiments convert changes in phase to changes in output voltage to perform analog demodulation of a phase modulated microwave carrier. Certain aspects and embodiments use resonance when the reactive components of the circuit (capacitive and inductive components) are equal in magnitude and 180 degrees out of phase with one another, thereby cancelling out the reactance component of the circuit's impedance.

Disclosed are example embodiments of a circuit comprising a first inductor-capacitor (LC) loop, a second LC loop having at least one of a series connection or parallel connection to the first LC loop, and a gyrator coupled between the first LC loop and the second LC loop. In an example, the first LC and the second LC loop each include an inductive element (L) and a capacitive (C) element coupled to each other in series. In another example, the first LC and the second LC loop each include an inductive element (L) and a capacitive (C) element coupled to each other in parallel.

An electronic device, including a substrate and multiple modulation units, is provided. The modulation units are disposed on the substrate. Each modulation unit includes a first electronic element, a second electronic element, a first signal line, a second signal line, and a third signal line. The first signal line provides a first voltage to the first electronic element. The second signal line provides a second voltage to the second electronic element. The third signal line provides a third voltage to the first electronic element and/or the second electronic element. The first voltage is different from the second voltage, and the third voltage is different from the first voltage and/or the second voltage.

An electronic device, including a substrate and multiple modulation units, is provided. The modulation units are disposed on the substrate. Each modulation unit includes a first electronic element, a second electronic element, a first signal line, a second signal line, and a third signal line. The first signal line provides a first voltage to the first electronic element. The second signal line provides a second voltage to the second electronic element. The third signal line provides a third voltage to the first electronic element and/or the second electronic element. The first voltage is different from the second voltage, and the third voltage is different from the first voltage and/or the second voltage.

Provided are a band-pass filter circuit and a multiplexer. The band-pass filter circuit includes an electromagnetic LC filter circuit and acoustic resonance units. At least one of the acoustic resonance units each includes at least one first acoustic resonator and at least one second acoustic resonator. The first acoustic resonator is connected in series between the band-pass filter circuit and the electromagnetic LC filter circuit. Each of the at least one second acoustic resonator is connected to a terminal of the at least one first acoustic resonator, where the first terminal of the band-pass filter circuit serves as an input terminal or output terminal of the band-pass filter circuit. One or more of the acoustic resonance units are connected on an input side of the electromagnetic LC filter circuit; and the remaining of the acoustic resonance units are connected on an output side of the electromagnetic LC filter circuit.

Circuits and methods for an amplifier (particularly LNAs) that achieve wideband output impedance matching and high gain while simultaneously rejecting out-of-band (OOB) harmonic frequencies. Some embodiments allow multiple modes of operation to allow selection of gain versus linearity characteristics. One aspect of the present invention is improvement of the linearity and sensitivity of a whole RF front end (RFFE) receiver chain by suppressing OOB gain within an LNA component at higher order harmonic frequencies. Another aspect of the present invention are new wideband and ultra-wideband LNA load circuits that, while achieving high frequency OOB rejection, maintain in-band high gain and wideband output impedance matching at the same time. Yet another aspect of the present invention are new ultra-wideband LNA output impedance matching circuits.

Circuits and methods for an amplifier (particularly LNAs) that achieve wideband output impedance matching and high gain while simultaneously rejecting out-of-band (OOB) harmonic frequencies. Some embodiments allow multiple modes of operation to allow selection of gain versus linearity characteristics. One aspect of the present invention is improvement of the linearity and sensitivity of a whole RF front end (RFFE) receiver chain by suppressing OOB gain within an LNA component at higher order harmonic frequencies. Another aspect of the present invention are new wideband and ultra-wideband LNA load circuits that, while achieving high frequency OOB rejection, maintain in-band high gain and wideband output impedance matching at the same time. Yet another aspect of the present invention are new ultra-wideband LNA output impedance matching circuits.

Described herein are on-chip isolator devices that can be employed in high-power applications and that are designed to enhance high common-mode transient immunity (CMTI) without sacrificing isolator gain. An isolator device includes two dies. A first die supports an isolation barrier and the second die is barrierless. The second die is barrierless in that it lacks isolation materials that are commonly used to sustain isolation barriers in on-chip isolator devices (e.g., polyimide). To enhance CMTI despite the absence of a further isolation barrier formed on the second die, the second die is provided with a tapped impedance element, an impedance element having a tap that couples the impedance element to a reference potential (e.g., to ground). The secondary side of the isolator of the first die is coupled to the tapped impedance element of the second die, thus creating a discharge path for common-mode transients.