H03H9/00

Acoustic resonator filter

An acoustic resonator filter includes at least one series acoustic resonator electrically connected between a first port and a second port in series, through which a radio frequency (RF) signal passes; at least one second shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground; and at least one first shunt acoustic resonator electrically shunt-connected between the at least one series acoustic resonator and a ground and having a resonance frequency higher than a resonance frequency of the at least one second shunt acoustic resonator. At least one shunt acoustic resonator, among the at least one first shunt acoustic resonator and the at least one second shunt acoustic resonator has a temperature coefficient of frequency (TCF) corresponding to resonance frequency sensitivity more insensitive than resonance frequency sensitivity according to a change in temperature of the at least one series acoustic resonator filter.

Hybrid structure for a surface acoustic wave device
11335847 · 2022-05-17 · ·

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

HYBRID STRUCTURE FOR A SURFACE ACOUSTIC WAVE DEVICE
20220158080 · 2022-05-19 ·

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

Phase shift structures for acoustic resonators

Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.

Method for creating double bragg mirror for tight frequency reference control

A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

TURBOMACHINES WITH SAW OR BAW DEVICES, MEASURING ARRANGEMENTS AND INSTALLATION METHODS
20210310369 · 2021-10-07 ·

An arrangement is disclosed for measuring an environment parameter at a rotor of a rotary machine; according to some embodiments, the parameter to be measured is temperature and the machine to monitor is a turbomachine. The arrangement includes at least: a SAW or BAW device electrically coupled with an antenna, a parameter-sensitive impedance device, and two identical cables electrically coupling the SAW or BAW device respectively with the impedance device and a short-circuit or an open-circuit or a matching impedance device. The SAW or BAW device is located in a first zone of the rotor, while the parameter-sensitive impedance device is located in a second zone of the rotor remote from the first zone of the rotor. An interrogator can obtain environment parameter values by sending RF signals to the SAW or BAW device through the antenna.

ELECTRONIC CONFIGURATION AND CONTROL FOR ACOUSTIC STANDING WAVE GENERATION
20210268406 · 2021-09-02 ·

Aspects of the disclosure are directed to an apparatus for separating a second fluid or a particulate from a host fluid. That apparatus comprises a flow chamber with at least one inlet and at least one outlet. A drive circuit configured to provide a drive signal to a filter circuit configured to receive the drive signal and provide a translated drive signal. An ultrasonic transducer is cooperatively arranged with the flow chamber, and transducer includes at least one piezoelectric element configured to be driven by the current drive signal to create an acoustic standing wave in the flow chamber. At least one reflector opposing the ultrasonic transducer to reflect acoustic energy.

Multilayer piezoelectric substrate

An acoustic wave device includes a layered substrate having a piezoelectric material layer bonded to a second material layer including a material having a higher thermal conductivity than the piezoelectric material layer, interdigital transducer electrodes disposed on a surface of the piezoelectric material layer, contact pads disposed on the piezoelectric material layer and in electrical contact with the interdigital transducer electrodes, external bond pads disposed on the second material layer, and conductive vias passing through the layered substrate and providing electrical contact between the contact pads and external bond pads.

Filter including two types of acoustic wave resonators

An acoustic wave device is disclosed. The acoustic wave device can include a transmit filter that includes bulk acoustic wave resonators and a series surface acoustic wave resonator that is coupled between the bulk acoustic wave resonators and a transmit output node. The acoustic wave device can also include a loop circuit that is coupled to the transmit filter. The loop circuit can generate an anti-phase signal to a target signal at a particular frequency.

ACOUSTIC WAVE DEVICE WITH HIGH THERMAL CONDUCTIVITY LAYER ON INTERDIGITAL TRANSDUCER
20210226604 · 2021-07-22 ·

An acoustic wave device includes a piezoelectric substrate, interdigital transducer electrodes including a predetermined number of electrode fingers disposed on an upper surface of the substrate, and a dielectric material layer having a first portion and a second portion. The first portion is disposed on the upper surface of the substrate and between the interdigital transducer electrode fingers. The second portion is disposed above the interdigital transducer electrode fingers. The acoustic wave device further includes at least one thermally conductive bridge disposed within the dielectric material layer and contacting upper surfaces of at least two adjacent interdigital transducer electrode fingers to dissipate heat therefrom.