A transmission gate includes a first P-type transistor and a second P-type transistor coupled in series between a first signal node and an internal node. The transmission gate is enabled by turning on the first P-type transistor and the second P-type transistor to communicate signals between the first signal node and the internal node. The transmission gate is disabled by turning off the first P-type transistor and the second P-type transistor to stop communicating signals between the first signal node and the internal node. While the transmission gate is disabled, a third P-type transistor having a first current electrode coupled to a circuit node between the first and second P-type transistors and a control electrode coupled to the first signal node is used to track voltage of the first signal node and, in response to the tracking, control a voltage level at the circuit node to limit a gate-to-source voltage of the first P-type transistor.

A timing generator includes a first current source, a first switch, a second current source, a second switch, a third switch, a capacitor, a signal synthesizer, and a timing difference extractor. The first current source is for generating a first current according to the input voltage. The second current source is for generating a second current according to the input voltage. The first switch includes a control terminal for receiving a charging signal. The second switch includes a control terminal for receiving a timing difference signal. The third switch includes a control terminal for receiving a reset signal. The capacitor is coupled between a charging terminal and a ground terminal. The signal synthesizer is for generating a timing signal according to a charging voltage and a reference voltage. The timing difference extractor is for generating a timing difference signal according to the timing signal and a deformed timing signal.

A comb signal generator that includes at least two signal sources that each provide a signal, wherein the signals provided by the at least two signal sources are shaped similarly. The com signal generator also has a combining circuit connected with the at least two signal sources, wherein the combining circuit is configured to combine the signals provided by the at least two signal sources, thereby generating a combined signal. Further, the com signal generator includes a clipping circuit connected with the combining circuit, wherein the clipping circuit is configured to receive and process the combined signal, thereby generating a comb signal. Further, a method of providing a phase and amplitude reference is described.

A comb signal generator that includes at least two signal sources that each provide a signal, wherein the signals provided by the at least two signal sources are shaped similarly. The com signal generator also has a combining circuit connected with the at least two signal sources, wherein the combining circuit is configured to combine the signals provided by the at least two signal sources, thereby generating a combined signal. Further, the com signal generator includes a clipping circuit connected with the combining circuit, wherein the clipping circuit is configured to receive and process the combined signal, thereby generating a comb signal. Further, a method of providing a phase and amplitude reference is described.

The interface circuit includes a first transistor, a second transistor, a first switch, a first logic circuit and a second logic circuit. The first transistor is controlled by a enable signal. The second transistor is controlled by a first control signal. The first switch is coupled between a second end of the first transistor and the output end of the interface circuit, wherein the first switch is controlled by a second control signal. The first logic circuit generates the first control signal according to the enable signal and at least one indication signal. The second logic circuit generates the second control signal according to the first control signal and the enable signal.

There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure. In one implementation, the bipolar semiconductor device is an insulated-gate bipolar transistor (IGBT).

A clock generation circuit includes a two-phase non-overlapping clock generation circuit, an inverter, and a delay circuit. The two-phase non-overlapping clock generation circuit is configured to generate a first phase clock signal and a second phase clock signal based on a non-inverted clock signal and an inverted clock signal. The first phase clock signal and the second phase clock signal correspond to a same logical value during a first duration and a second duration within a clock cycle. The inverter is configured to generate the inverted clock signal based on an input clock signal. The delay circuit is configured to generate the non-inverted clock signal based on the input clock signal. The delay circuit has a predetermined delay sufficient to cause a difference between the first duration and the second duration to be less than a predetermined tolerance.

Disclosed is an electronic drive circuit and a drive method. The drive circuit includes an output; a first output transistor comprising a control node and a load path, wherein the load path is coupled between the output and a first supply node; a voltage regulator configured to control a voltage across the load path of the first output transistor; and a first driver configured to drive the first output transistor based on a first control signal.

A switch driving device includes a gate driver, a bootstrap circuit, a current limiting portion, and a current control portion. The gate driver drives an N-type semiconductor switch element. The bootstrap circuit includes a boot capacitor and a boot diode and applies a voltage to the gate driver. The current limiting portion limits a current to be supplied to the boot capacitor. The current control portion controls operations of the current limiting portion. The current limiting portion is provided on a path that electrically connects the boot capacitor and the boot diode to each other.

A method for driving an output node includes driving a control node of an output device coupled to the output node according to an input signal and using a fixed regulated voltage and a variable regulated voltage. The method includes generating the fixed regulated voltage based on a first power supply voltage, a second power supply voltage, and a first reference voltage. The method includes generating the variable regulated voltage based on the first power supply voltage, the second power supply voltage, and a second reference voltage. The method includes generating the second reference voltage based on the first power supply voltage, the second power supply voltage, a reference current, and a predetermined target voltage level of the control node of the output device. In an embodiment of the method, generating the second reference voltage includes periodically calibrating the second reference voltage.