Providing electric power distribution for fracturing operations comprising receiving, at a transport, electric power from a mobile source of electricity at a first voltage level and supplying, from the transport, the electric power to a fracturing pump transport at the first voltage level using only a first, single cable connection. The first voltage level falls within a range of 1,000 V to 35 kilovolts. The transport also supplies electric power to a second transport at the first voltage level using only a second, single cable connection.

A solid-state relay circuit includes an isolator circuit, a first output terminal, a second output terminal, and an output switch. The output switch is coupled to the isolator circuit, and includes a first transistor, a second transistor, and a diode. The first transistor is coupled to the first output terminal. The second transistor is coupled to the first transistor and the second output terminal. The diode is coupled to the first transistor, the second transistor, and ground, and is configured to block current flow from ground to the first transistor and the second transistor. The isolator circuit is coupled to the output switch and is configured to activate the first transistor and the second transistor.

A semiconductor integrated circuit for power supply forming a power supply device generates an output voltage from an input voltage. The semiconductor integrated circuit includes a plurality of external terminals including a target external terminal; a target transistor disposed between the target external terminal and a reference conductive part having a predetermined reference potential; an output voltage monitoring circuit arranged to turn on or off the target transistor in accordance with the output voltage; and a constant current circuit arranged to supply a constant current to a point of the reference potential via the target external terminal.

In a method of repairing through-electrodes, a plurality of through-electrodes are grouped into a plurality of through-electrode groups. A plurality of redundant through-electrodes are grouped into a plurality of redundant through-electrode groups. Repair paths for the plurality of through-electrodes are searched. When searching the repair paths, in response to a Y-th through-electrode included in an X-th through-electrode group being a defective through-electrode or in response to receiving a first signal from an (X−1)-th through-electrode group, it is determined whether a y-th redundant through-electrode included in an x-th redundant through-electrode group is available for performing signal transmission thereto. In response to the y-th redundant through-electrode being available for performing signal transmission thereto, a second signal input to the Y-th through-electrode is transmitted to the y-th redundant through-electrode. In response to the y-th redundant through-electrode being unavailable for performing signal transmission thereto, the second signal input to the Y-th through-electrode is transmitted to an (X+1)-th through-electrode group.

A semiconductor device with a novel structure is provided. The semiconductor device includes a sensor, an amplifier circuit to which a sensor signal of the sensor is input, a sample-and-hold circuit that retains a voltage corresponding to an output signal of an amplifier input to the sample-and-hold circuit, an analog-to-digital converter circuit to which an output signal of the sample-and-hold circuit corresponding to the voltage is input, and an interface circuit. The interface circuit has a function of switching and controlling a first control period in which the sensor signal is input to the amplifier circuit and an output signal of the amplifier circuit is retained in the sample-and-hold circuit and a second control period in which a digital signal obtained by output of the voltage retained in the sample-and-hold circuit to the analog-to-digital converter circuit is output to the interface circuit. In the first control period, the analog-to-digital converter circuit is switched to stop output of the digital signal. The first control period is longer than the second control period.

An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch. The substrate bias generation circuit generates a substrate bias voltage from the power supply voltage and supplies charges based on the substrate bias voltage to the capacitor while the switch is ON-state. While the switch is OFF-state, the capacitor stores the accumulated charges based on the substrate bias voltage. While the switch is ON-state, the substrate bias generation circuit adds based on the substrate bias voltage to charge that was held, and states the back bias voltage. The substrate bias generation circuit supplies the back bias voltage to memory circuit.

An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch. The substrate bias generation circuit generates a substrate bias voltage from the power supply voltage and supplies charges based on the substrate bias voltage to the capacitor while the switch is ON-state. While the switch is OFF-state, the capacitor stores the accumulated charges based on the substrate bias voltage. While the switch is ON-state, the substrate bias generation circuit adds based on the substrate bias voltage to charge that was held, and states the back bias voltage. The substrate bias generation circuit supplies the back bias voltage to memory circuit.

Provided is a semiconductor device comprising a high-side switching device, a low-side switching device, a high-side driver configured to turn on/off the high-side switching device, a low-side driver configured to turn on/off the low-side switching device, a high-side driving external terminal configured to supply a power supply voltage for driving the high-side driver, and a protection circuit section connected to the high-side driving external terminal. The high-side driver may include a reference potential terminal set to a reference potential of the high-side driver. The protection circuit section may be connected between the high-side driving external terminal and the reference potential terminal.

Methods, systems, and computer readable media described herein can be operable to facilitate transitioning a device from a first state to a second state. A switch described herein allows for the use of an electronic circuit to perform the toggle and persistence functions while simultaneously giving more flexibility to the industrial design and physical switch implementation. The switch allows this preserving of the state using only a toggle on a voltage and thus allowing for a hardware only solution. The switch described herein allows for the use of smaller and less complicated mechanical switches allowing for more compact industrial designs. The switch uses a programmable voltage reference as a 1 bit non-volatile memory cell that is programmed by means of a logic pulse to the device. This allows a software independent setting of the state of the privacy switch. This state will remain through power cycles.

An embodiment provides a closed loop active gate driver configured to drive a switch for an inductive load and including a feedback loop, the feedback loop configured to sample a repetitive output waveform of the inductive load, the output waveform having a plurality of repetitive cycles and the feedback loop configured to sample the output waveform using a sampling rate that is lower than a sampling rate required for characterizing the output waveform, sample points acquired in cycles of the plurality of cycles are acquired at different time points during the cycles and wherein a representation of the output waveform is reconstructed using the sample points.