Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

A method and associated systems for using direct sums and invariance groups to optimize the testing of partially symmetric quantum-logic circuits is disclosed. A test system receives information that describes the architecture of a quantum-logic circuit to be tested. The system uses this information to organize the circuit's inputs into two or more mutually exclusive subsets of inputs. The system computes a direct sum of a set of groups associated with the subsets in order to generate an invariance group that contains one or more invariant permutations of the circuit's inputs. These invariant permutations can be used to reduce the number of tests required to fully verify the circuit for all possible input vectors. Once one specific input vector has been verified, there is no need to test other vectors that can be generated by performing any one of the invariant permutations upon the previously verified vector.

A semiconductor device includes a first gate electrode, an insulating part, a source electrode, a drain electrode, and a contact part. The insulating part is on one surface of the first gate electrode. The source electrode is connected to the insulating part. The drain electrode is connected to the insulating part. The contact part is between the source electrode and the drain electrode and on the insulating part. The contact part contains an atomic layered material. The contact part has a second part contactable with a sample. The second surface is opposite to a first surface facing the insulating part. A surface of the insulating part, the surface facing the contact part, has an uneven structure with respect to the first gate electrode.

A memory device includes a first on-die termination circuit, a second on-die termination circuit, a voltage generator, and a code generator. The first on-die termination circuit may correspond to a data input buffer. The second on-die termination circuit may correspond to a command/address buffer. The voltage generator may generate a reference voltage. The code generator may generate a resistance calibration code of a selected one of the on-die termination circuits in response to the reference voltage. The reference calibration code may calibrate a resistance value of the selected on-die termination circuit.

A semiconductor device may include a division control circuit and a latch circuit. The division control circuit may be configured to divide an external clock to generate a first preliminary divided clock and a second preliminary divided clock. The division control circuit may be configured to output the first and second preliminary divided clocks or any one of the first and second preliminary divided clocks as first and second divided clocks. The latch circuit may be configured to latch an external control signal in response to the first and second divided clocks and configured to output latched signals as first and second latch control signals.

A die-to-die data transmitter is disclosed with a pull-up one-shot circuit and a pull-down one-shot circuit, each forming a delay circuit that determines a variable preemphasis period.

A bias voltage generator circuit may include a mode control circuit, a clock generator circuit coupled with the mode control unit and configured to generate a plurality of clock signals, and a charge pump circuit configured to receive the clock signals. The charge pump circuit may be coupled with the mode control circuit and operable to output selectable output voltages according to input from the mode control circuit. The output selectable voltages may depend upon the clock signals.

An apparatus is provided which comprises: a first flip-flop (FF) cell with a data path multiplexed with a scan-data path, wherein the scan-data path is independent of a min-delay buffer, wherein the first FF cell has a memory element formed of at least two inverting cells, wherein the two inverting cells are coupled together via a common node; and a second FF cell with a data path multiplexed with a scan-data path, wherein the scan-data path of the second FF cell is independent of a min-delay buffer, and wherein the scan-data path of the second FF cell is coupled to the common node of the first FF cell.

A voltage-mode transmitter includes a calibration circuit having a replica circuit. By adjusting a feedback voltage driving a gate of a replica transistor in the replica circuit so that an impedance of the replica circuit matches an impedance of a variable resistor, the calibration circuit calibrates an output impedance of a single slice driver.