Patent classifications
H03K19/00
Data input buffer and semiconductor apparatus including the same
A data input buffer includes a plurality of buffer units configured to receive a first impedance calibration code and a second impedance calibration code, wherein each of the plurality of buffer units outputs an offset detected with a first input terminal and a second input terminal thereof short-circuited, as write data, and wherein a buffer unit corresponding to a current value of the first impedance calibration code among the plurality of buffer units is configured to correct the offset according to the second impedance calibration code.
Level shifter with immunity to state changes in response to high slew rate signals
An integrated circuit (IC) includes a level shifter coupled to receive a first supply voltage and a second supply voltage and configured to generate a first output signal and a second output signal in response to an input command signal and an edge detector configured to detect an edge on the second supply voltage and to sink a current from the level shifter in response to detection of the edge in order to prevent a change in logic state of the first output signal or the second output signal. The edge detector can include a positive edge detector configured to generate a positive edge signal in response to detection of a positive going edge of greater than a first predetermined slew rate and a negative edge detector configured to generate a negative edge signal in response to detection of a negative going edge of greater than a second predetermined slew rate.
INTEGRATED CIRCUIT WITH SPARE CELLS
The disclosure relates to an integrated circuit comprising: a first voltage terminal; a second voltage terminal; and a plurality of logic cells, comprising one or more field effect transistors having a p-type channel and one or more field effect transistors having an n-type channel. The plurality of logic cells comprises a regular subset of cells and a spare subset of cells. Electrical connectors are arranged to: connect the gates of the regular subset of cells in order to provide a functional logic arrangement; connect the gates of the one or more field effect transistors having a p-type channel of the spare subset of cells to the first voltage terminal; and connect the gates of the one or more field effect transistors having an n-type channel of the spare subset of cells to the second voltage terminal.
PHYSICALLY UNCLONABLE FUNCTION DEVICE
The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.
MULTI-MODE STANDARD CELL LOGIC AND SELF-STARTUP FOR BATTERY-INDIFFERENT OR PURE ENERGY HARVESTING SYSTEMS
A cell logic structure for a battery-indifferent or pure energy harvesting multi-mode system, a battery-indifferent or pure energy harvesting multi-mode system, a method of operating a cell logic structure for a battery-indifferent or pure energy harvesting multi-mode system, and a method of operating battery-indifferent or pure energy harvesting multi-mode system. The cell gate structure comprises a CMOS gate circuit; a header circuit coupled to the CMOS gate circuit and comprising first and second header transistors for coupling in parallel between a supply voltage and the CMOS gate circuit; and a footer circuit coupled to the CMOS gate circuit and comprising first and second footer transistors for coupling in parallel between the CMOS gate circuit and a ground voltage; wherein the header and footer circuits are configured for switching between different operation modes of the multi-mode system, the different operation modes chosen from a range from a normal mode in which feedback paths from an output of the CMOS gate circuit to the gate of the second header transistor and to the gate of the second footer transistor are substantially or fully disabled for full swing in the output voltage of the CMOS gate circuit, and a leakage suppression mode in which the feedback paths are substantially or fully enabled.
Semiconductor Device, Electronic Component, and Electronic Device
Skew of a multi-context PLD in context switch is reduced to achieve low power consumption. The frequency of a clock signal is switched in context switch operation in accordance with circuit operation to secure time required for context switch. By returning the frequency of the clock signal to the original frequency after executing the context switch, the PLD can maintain high-speed processing and perform the context switch accurately and safely. The time required for the context switch mainly depends on a hardware structure (circuit layout including a parasitic component). Thus, the reliability in the context switch can be improved when time that is equal to or longer than the longest time required for circuit change is secured.
RESISTOR ARRAY, OUTPUT BUFFER, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
A resistor array made of a semiconductor includes a plurality of resistor groups and a common line that electrically connects the M-th resistors of the plurality of resistor groups. Each resistor group includes first to M-th resistors connected in series, M being an integer of 2 or greater, and at least one short-circuit line, each short-circuiting at least one, but not all, of the M resistors.
Voltage tolerant termination presence detection
Apparatuses and methods associated with voltage tolerant termination presence detection for universal serial bus type-C connectors are disclosed herein. In embodiments, an apparatus to enable voltage tolerant termination presence detection may include sensor circuitry to determine whether a device coupled to the sensor circuitry is to operate in host mode or device mode based on a signal on a configuration channel between the device and the sensor circuitry. In embodiments, the apparatus may further include termination circuitry to bias the configuration channel in accordance with the host mode or the device mode based on the determination of whether the device is to operate in the host mode or the device mode. Other embodiments may be described and/or claimed.
SEMICONDUCTOR DEVICE AND MEMORY DEVICE
A semiconductor device of an embodiment includes a buffer configured to perform data transmission by turning on and off a first output transistor group and a second output transistor group; a first correction circuit configured to calibrate a resistance value of the buffer by controlling an on-off state of each of first transistors of the first output transistor group; a second correction circuit configured to calibrate the resistance value of the buffer by controlling an on-off state of each of second transistors of the second output transistor group; and a control circuit configured to cause the calibration by the first correction circuit to be performed in a non-communication duration other than a duration of data transmission from the buffer and cause the calibration by the second correction circuit to be performed in a duration other than a duration of the calibration by the first correction circuit.
Active Low-Power Termination
An active termination circuit comprising an input node connected to a transmission line, a first transistor, and a second transistor. The transmission line supplies a signal to the input node. The first transistor is diode connected between a high voltage supply and the input node. The first transistor terminates the signal when the signal is at a low logic level. The second transistor is diode connected between the input node and a low voltage supply. The second transistor terminates the signal when the signal is at a high logic level.