Asynchronous circuit elements are described. Asynchronous circuit elements include a consensus element (c-element), completion tree, and validity tree. The c-element is implemented using adjustable threshold based multi-input capacitive circuitries. The completion tree comprises a plurality of c-elements organized in a tree formation. The validity tree comprises OR gates followed by c-elements. The multi-input capacitive circuitries include capacitive structures that may comprise linear dielectric, paraelectric dielectric, or ferroelectric dielectric. The capacitors can be planar or non-planar. The capacitors may be stacked vertically to reduce footprint of the various asynchronous circuitries.

Microelectronic circuit com-prises a plurality of logic units and register circuits, arranged into a plu-rality of processing paths, and a plu-rality of monitoring units associated with respective ones of said processing paths. Each of said monitoring units is configured to produce an observation signal as a response to anomalous opera-tion of the respective processing path. Each of said plurality of logic units belongs to one of a plurality of delay classes according to an amount of delay that it is likely to generate. Said de-lay classes comprise first, second, and third classes, of which the first class covers logic units that are likely to generate longest delays, the second class covers logic units that are likely to generate shorter delays than said first class, and the third class covers logic units that are likely to generate shorter delays than said second class. At least some of said plurality of pro-cessing paths comprise logic units be-longing to said second class but are without monitoring units. At least some of said plurality of processing paths comprise logic units belonging to said third class but have monitoring units associated with them.

Disclosed is technology that is driven using a positive feedback loop of a feedback field-effect transistor and is capable of performing a logic-in memory function. The logic-in-memory inverter includes a metal oxide semiconductor field-effect transistor, and a feedback field-effect transistor in which a drain region of a nanostructure is connected in series to a drain region of the metal oxide semiconductor field-effect transistor, wherein the logic-in-memory inverter performs a logical operation is performed based on an output voltage V.sub.OUT that changes depending on a level of an input voltage V.sub.IN that is input to a gate electrode of the feedback field-effect transistor and a gate electrode of the metal oxide semiconductor field-effect transistor while a source voltage V.sub.SS is input to a source region of the nanostructure and a drain voltage V.sub.DD is input to a source region of the metal oxide semiconductor field-effect transistor.

A data output buffer includes a first driver configured to drive a data input/output (I/O) pad according to an input signal and allow data drivability to be controlled according to an impedance calibration code and a second driver configured to perform a de-emphasis operation on the data I/O pad and allow de-emphasis drivability to be controlled according to the impedance calibration code.

The interface circuit includes a first transistor, a second transistor, a first switch, a first logic circuit and a second logic circuit. The first transistor is controlled by a enable signal. The second transistor is controlled by a first control signal. The first switch is coupled between a second end of the first transistor and the output end of the interface circuit, wherein the first switch is controlled by a second control signal. The first logic circuit generates the first control signal according to the enable signal and at least one indication signal. The second logic circuit generates the second control signal according to the first control signal and the enable signal.

A clock distribution circuit includes a global distribution circuit, a first local distribution circuit and a second local distribution circuit. The global distribution circuit receives external clock signals and generates internal clock signals and primary reference clock signal set according to the external clock signals. The first local distribution circuit receives the internal clock signals and the primary reference clock signal set and generates a secondary reference clock signal set according to the internal clock signals and the primary reference clock signal set. The second local distribution circuit receives the internal clock signals and the secondary reference clock signal set and generates a thirdly reference clock signal set according to the internal clock signals and the secondary reference clock signal set.

Decision feedback equalization (DFE) training time in a memory device is reduced through the use of a hybrid search to select values of tap coefficients for taps in the DFE. The hybrid search includes two searches. A first search is performed to identify initial values of tap coefficients, a second search uses the initial values of tap coefficients to find the final values of tap coefficients.

Disclosed is a transmitter which includes a channel driver that includes a pull-up transistor and a pull-down transistor connected between a power node and a ground node and outputs a voltage between the pull-up transistor and the pull-down transistor as a transmit signal, and a pre-driver that controls the pull-up transistor and the pull-down transistor in response to a driving signal and controls the channel driver such that the transmit signal is overshot at a rising edge of the driving signal and the transmit signal is undershot at a falling edge of the driving signal.

Disclosed is technology that is driven using a positive feedback loop of a feedback field-effect transistor and is capable of performing a logic-in memory function. The logic-in-memory inverter includes a metal oxide semiconductor field-effect transistor, and a feedback field-effect transistor in which a drain region of a nanostructure is connected in series to a drain region of the metal oxide semiconductor field-effect transistor, wherein the logic-in-memory inverter performs a logical operation is performed based on an output voltage V.sub.OUT that changes depending on a level of an input voltage V.sub.IN that is input to a gate electrode of the feedback field-effect transistor and a gate electrode of the metal oxide semiconductor field-effect transistor while a source voltage V.sub.SS is input to a source region of the nanostructure and a drain voltage V.sub.DD is input to a source region of the metal oxide semiconductor field-effect transistor.

A transmission-end impedance matching circuit operates according to a signal of an overvoltage signal source and includes a first level shifter, a voltage generating circuit, and an impedance matching circuit. The first level shifter generates a first conversion voltage according to a source signal and operates between a first high voltage and a ground voltage. The voltage generating circuit generates a second high voltage according to the first conversion voltage, the first high voltage, and a medium voltage. The impedance matching circuit includes a second level shifter, a transistor, and two resistors. The second level shifter generates a gate voltage according to the second high voltage, a low voltage, and an input signal. The transistor is turned on/off according to the gate voltage and has a withstand voltage lower than the first high voltage. Each of the two resistors is coupled between the transistor and a differential signal transmission end.