Provided are a photoelectric detection circuit and a driving method thereof, a display apparatus and a manufacturing method thereof. The photoelectric detection circuit includes: a first reset sub-circuit, a second reset sub-circuit, a first storage sub-circuit, a data read sub-circuit and a photosensitive device. A first terminal of the data read sub-circuit, a first terminal of the first storage sub-circuit, a first electrode of the photosensitive device and a first terminal of the first reset sub-circuit are connected to a first node. A second electrode of the photosensitive device is connected to a common voltage line. The data read sub-circuit is configured to transmit a voltage of the first node to a data read line in response to a signal of a scan line. The first reset sub-circuit is configured to reset the voltage of the first node.

An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

To prevent peeling at an interface between layers forming a layer structure of a solid-state imaging element even in a case where stress is caused by an increase in pressure in a cavity in a configuration in which a translucent member is provided on the solid-state imaging element with a support portion interposed therebetween and the cavity is formed between the solid-state imaging element and the translucent member. There are included a solid-state imaging element, the light-receiving side of which corresponds to one of plate surface sides of a semiconductor substrate; a translucent member provided on the light-receiving side of the solid-state imaging element at a predetermined distance therefrom; and a support portion that forms a cavity between the solid-state imaging element and the translucent member, in which the solid-state imaging element has a layer structure provided on the light-receiving side of the semiconductor substrate, the layer structure including a first layer, a second layer, and a third layer, the second layer being different in material from the first layer, the third layer being different in material from the first layer and formed in the second layer, and the third layer has a protrusion-and-recess shape portion at least in a region where the support portion is formed in a planar direction along the plate surface of the semiconductor substrate, the protrusion-and-recess shape portion forming an interface between the second layer and the third layer in a protrusion-and-recess shape.

The present disclosure relates to encoding of video image using coding parameters, which are adapted based on events related to motion within the video image. Image content is captured by a standard image sensor and an event-triggered sensor, providing an event-signal indicating changes (e.g. amount and time-spatial location) of image intensity. Objects are detected within the video image, based on the event signal assessing motion of the object, and their textures extracted. The spatial-time coding parameters of the video image are determined based on the location and strength of the event signal, and the extent to which the detected objects moves.

There is provided a light modulating element including a plurality of compounds whose light absorption characteristics change with external simulation. The plurality of compounds are compounds having different absorption wavelengths. The light modulating element has a variable transmittance VT(λ) obtained by combining light absorption characteristics of the plurality of compounds. NWD.sub.Max<NWD.sub.MaxFP is satisfied.

Disclosed is an electronic device configured to generate depth information. The electronic device includes: a memory storing one or more instructions and image data; and at least one processing circuit configured to generate the depth information on the image data by executing the one or more instructions, wherein the at least one processing circuit is further configured to obtain luminance data of the image data, generate absolute depth data for the luminance data by using a first artificial neural network configured to extract disparity features, and generate the depth information based on the absolute depth data.

An embodiment comprises: a housing; a bobbin, accommodated inside the housing, for mounting a lens; a first coil arranged on an outer peripheral surface of the bobbin; magnets arranged in the housing; a coil board that comprises second coils arranged below the housing and arranged so as to be spaced from each other, and connection parts connected to the second coils; a circuit board, which is arranged below the coil board and comprises first pad parts arranged at locations corresponding to the connection parts; and a conductive adhesive member for bonding the connection part and the first pad part, which correspond to each other, wherein each of the connection parts comprises a groove part depressed from the outer surface of the coil board, and exposing any one corresponding upper surface among the first pad parts, and a bonding part prepared around the groove part, and the conductive adhesive member is arranged on the upper surface of the bonding part and on the upper surface of the first pad part exposed by the groove part and electrically connects the bonding part with the first pad part.

A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.

An object classification system for classifying objects is described. The system comprises an imaging region adapted for irradiating an object of interest, an arrayed detector, and a mixing unit configured for mixing the irradiation stemming from the object of interest by reflecting or scattering on average at least three times the irradiation after its interaction with the object of interest and prior to said detection.

A photoelectric conversion apparatus having a first substrate and a second substrate overlaid on each other and including electrically conductive portions is provided. The first substrate includes a photoelectric conversion element, a first portion configured to form part of a first surface, a second portion which is included in an electrically conductive pattern closest to the first portion, and a third portion which is included in an electrically conductive pattern second closest to the first portion. The second substrate includes a fourth portion configured to form part of a second surface, and a circuit. In a planar view with respect to the first surface, an area of the first portion is smaller than an area of the second portion and larger than an area of a portion of the third portion overlaying the second portion.