Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

To provide a piezoelectric film that is less likely to be electrified and that can be safely handled. A multilayered film according to an embodiment of the present invention including: a piezoelectric film containing polyvinylidene fluoride; and a protective film including an antistatic layer, the piezoelectric film and the protective film being bonded.

A display apparatus includes a housing; a back plate on the housing; a metal bezel clamped with the back plate at a side of the back plate; a display module and a display driving board on a side of the back plate away from the housing. An insulating material layer is provided between the back plate and the display driving board, which directly increases an impedance of a path for static electricity from the back plate to the display driving board; a side of the display module is fixed to the metal bezel by an insulating member, indirectly increasing an impedance of a path of the static electricity entering the display driving board through the display module. Therefore, most of the static electricity is discharged through other paths with small impedance, so that the static electricity less enters a signal ground plane.

A film for manufacturing an electronic component includes: a polymer layer; and metal nanowires dispersed in the polymer layer. The polymer layer may include a polyester-based compound such as polyethylene terephthalate. The metal nanowire may include a ferromagnetic metal such as at least one of nickel (Ni), cobalt (Co), and iron (Fe), or alloys thereof.

A film for manufacturing an electronic component includes: a polymer layer; and metal nanowires dispersed in the polymer layer. The polymer layer may include a polyester-based compound such as polyethylene terephthalate. The metal nanowire may include a ferromagnetic metal such as at least one of nickel (Ni), cobalt (Co), and iron (Fe), or alloys thereof.

An antistatic film including: a substrate film made of a thermoplastic resin containing a polymer including an alicyclic structure; and an antistatic layer provided on the substrate film, the layer containing electroconductive metal oxide particles, wherein the antistatic layer has a surface resistance of 1.0×10.sup.6 Ω/sq. or more and 1.0×10.sup.10 Ω/sq. or less, and the antistatic film has a haze value of 0.3% or less.

An antistatic film including: a substrate film made of a thermoplastic resin containing a polymer including an alicyclic structure; and an antistatic layer provided on the substrate film, the layer containing electroconductive metal oxide particles, wherein the antistatic layer has a surface resistance of 1.0×10.sup.6 Ω/sq. or more and 1.0×10.sup.10 Ω/sq. or less, and the antistatic film has a haze value of 0.3% or less.