Patent classifications
H05G2/00
Apparatus for generating extreme ultra-violet beam using multi-gas cell modules
Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.
Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.
Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.
Particle image velocimetry of extreme ultraviolet lithography systems
A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
System and method for cleaning an EUV mask
An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.
TARGET DEBRIS COLLECTION DEVICE AND EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS INCLUDING THE SAME
A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.
Closed-loop control of an X-ray pulse chain generated by means of a linear accelerator system
A method is for closed-loop control of an X-ray pulse chain generated via a linear accelerator system. In an embodiment, the method includes modulating a first electron beam within a first radio-frequency pulse duration, wherein the first multiple amplitude X-ray pulse is produced on modulating the first electron beam; measuring time-resolved actual values of the first multiple amplitude X-ray pulse; adjusting at least one pulse parameter as a function of a comparison of the specified multiple amplitude X-ray pulse profile and the measured time-resolved actual values; and modulating a second electron beam within a second radio-frequency pulse duration as a function of the at least one adjusted pulse parameter for production of the second multiple amplitude X-ray pulse, so the X-ray pulse chain is controlled.
Closed-loop control of an X-ray pulse chain generated by means of a linear accelerator system
A method is for closed-loop control of an X-ray pulse chain generated via a linear accelerator system. In an embodiment, the method includes modulating a first electron beam within a first radio-frequency pulse duration, wherein the first multiple amplitude X-ray pulse is produced on modulating the first electron beam; measuring time-resolved actual values of the first multiple amplitude X-ray pulse; adjusting at least one pulse parameter as a function of a comparison of the specified multiple amplitude X-ray pulse profile and the measured time-resolved actual values; and modulating a second electron beam within a second radio-frequency pulse duration as a function of the at least one adjusted pulse parameter for production of the second multiple amplitude X-ray pulse, so the X-ray pulse chain is controlled.
Short period undulator
The invention relates to a method for generating electromagnetic radiation (preferably UV, VUV, XUV, or X-rays), to an optical short-period undulator (10) and to a free-electron laser comprising the latter. To accomplish the method, a high-energy electrically charged particle beam (5) is provided, and high-intensity electromagnetic pulses (7, 7a, 7b) are generated, and by interfering said pulses with one another an electromagnetic standing wave is created, wherein said standing wave has an electric field strength of a pre-determined peak value. The particle beam is directed through the non-steady electromagnetic field of the standing wave in or in the vicinity of a plane spanned by nodes with maximal electric field strength of said electromagnetic standing wave. Meanwhile, by the electromagnetic field of the standing wave, the particle beam is forced to travel along an undulating path and thereby, in the form of radiation emitted by said particle beam, electromagnetic radiation that propagates in the propagation direction of the particle beam is generated. Said short-period undulator (10) comprises a pulse source (2) to emit high-intensity pulses falling into the terahertz frequency range and an interaction region to direct a high-energy electrically charged particle beam, in particular an electron beam, through the undulator with undulator effect. The undulator effect is provided in the interaction region through a dynamic effect developing in or in the vicinity of a plane spanned by nodes with maximal electric field strength of an electromagnetic standing wave created by the interference of high-intensity pulses falling into the terahertz frequency range, emitted by said pulse source.
Short period undulator
The invention relates to a method for generating electromagnetic radiation (preferably UV, VUV, XUV, or X-rays), to an optical short-period undulator (10) and to a free-electron laser comprising the latter. To accomplish the method, a high-energy electrically charged particle beam (5) is provided, and high-intensity electromagnetic pulses (7, 7a, 7b) are generated, and by interfering said pulses with one another an electromagnetic standing wave is created, wherein said standing wave has an electric field strength of a pre-determined peak value. The particle beam is directed through the non-steady electromagnetic field of the standing wave in or in the vicinity of a plane spanned by nodes with maximal electric field strength of said electromagnetic standing wave. Meanwhile, by the electromagnetic field of the standing wave, the particle beam is forced to travel along an undulating path and thereby, in the form of radiation emitted by said particle beam, electromagnetic radiation that propagates in the propagation direction of the particle beam is generated. Said short-period undulator (10) comprises a pulse source (2) to emit high-intensity pulses falling into the terahertz frequency range and an interaction region to direct a high-energy electrically charged particle beam, in particular an electron beam, through the undulator with undulator effect. The undulator effect is provided in the interaction region through a dynamic effect developing in or in the vicinity of a plane spanned by nodes with maximal electric field strength of an electromagnetic standing wave created by the interference of high-intensity pulses falling into the terahertz frequency range, emitted by said pulse source.