A target supply device according to an aspect of the present disclosure includes a nozzle through which a liquid target substance is output, and a vibration unit configured to vibrate the target substance supplied to the nozzle, and the vibration unit includes a vibration element configured to vibrate in accordance with applied drive voltage from outside, a vibration transfer unit contacting the nozzle and configured to transfer vibration of the vibration element to the nozzle, a load application member configured to apply a pressing load for pressing the vibration transfer unit against the nozzle, and a load adjustment device configured to adjust the pressing load in accordance with a signal from outside.

Embodiments of the disclosed system and method provide for generating a multiple-energy X-ray pulse. A beam of electrons is generated with an electron gun and modulated prior to injection into an accelerating structure to achieve at least a first and second specified beam current amplitude over the course of respective beam current temporal profiles. A radio frequency field is applied to the accelerating structure with a specified RF field amplitude and a specified RF temporal profile. The first and second specified beam current amplitudes are injected serially, each after a specified delay, in such a manner as to achieve at least two distinct energies of electrons accelerated within the accelerating structure during a course of a single RF-pulse. The beam of electrons is accelerated by the radio frequency field within the accelerating structure to produce accelerated electrons which impinge upon a target for generating Bremsstrahlung X-rays.

Embodiments of the disclosed system and method provide for generating a multiple-energy X-ray pulse. A beam of electrons is generated with an electron gun and modulated prior to injection into an accelerating structure to achieve at least a first and second specified beam current amplitude over the course of respective beam current temporal profiles. A radio frequency field is applied to the accelerating structure with a specified RF field amplitude and a specified RF temporal profile. The first and second specified beam current amplitudes are injected serially, each after a specified delay, in such a manner as to achieve at least two distinct energies of electrons accelerated within the accelerating structure during a course of a single RF-pulse. The beam of electrons is accelerated by the radio frequency field within the accelerating structure to produce accelerated electrons which impinge upon a target for generating Bremsstrahlung X-rays.

A system for generating pump illumination for laser sustained plasma (LSP) is disclosed. In embodiments, the system includes an illumination source and a beam shaper. The illumination source can be configured to output illumination having a first pupil power distribution. In embodiments, the beam shaper is configured to receive the illumination having the first pupil power distribution from the illumination source and is further configured to output pump illumination having a second pupil power distribution that is different from the first pupil power distribution.

An extreme ultraviolet light generation apparatus may include a chamber, a target supply device configured to successively supply targets into the chamber, and an extreme ultraviolet light collector mirror including a reflective surface having a through-hole at the center thereof. The reflective surface may reflect and collect extreme ultraviolet light generated at a predetermined emission cycle because of irradiation of the successively supplied targets with a laser beam. A gas ejection device may be disposed in the through-hole to jut out from the reflective surface and have a gas ejection opening to eject etching gas for debris onto the reflective surface. The gas ejection device may be configured so that the etching gas takes a longer time than the predetermined emission cycle to reach the through-hole-side end of effective reflective area of the reflective surface after being ejected from the gas ejection opening.

Methods, devices, and systems for protecting a vacuum environment from leakage are provided. The devices include an optical component for gas-tight closure of the vacuum environment, a retention device configured to retain the optical component and including a cooling region separated from the vacuum environment in a gas-tight manner and configured to receive a cooling medium to cool the optical component, a first part-region of the optical component being arranged in the cooling region, and a reduced-pressure region configured to have a reduced pressure and separated in a gas-tight manner from the vacuum environment and from the cooling region, a second part-region of the optical component being arranged in the reduced-pressure region, and a detector configured to detect a leakage in the optical component when the cooling medium flows from the cooling region into at least one of the reduced-pressure region or the vacuum environment.

A target delivery system for an extreme ultraviolet (EUV) light source is disclosed. The system includes: a conduit including an orifice configured to fluidly couple to a reservoir; an actuator configured to mechanically couple to the conduit such that motion of the actuator is transferred to the conduit; and a control system coupled to the actuator, the control system being configured to: determine an indication of pressure applied to target material in the reservoir, and control the motion of the actuator based on the determined indication of applied pressure. Moreover, techniques for operating a supply system are disclosed. For example, one or more characteristics of the supply system are determined, and an actuator that is mechanically coupled to the supply system is controlled based on the one or more determined characteristics such that an orifice of the supply system remains substantially free of material damage during operational use.

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

Capacitive measurements for monitoring vapor or deposits from a vapor in a radiation source for a lithography apparatus. The measurements may be used to control operation of the radiation source. In one particular arrangement measurements from a plurality of capacitors are used to distinguish between changes in capacitance caused by the vapor and changes in capacitance caused by deposits from the vapor.

A system for creating a plasma field Faraday cage around a structure, the system comprising a plurality of lasers spaced apart from each other, each laser being configured to transmit an electromagnetic energy beam to a focal point of an atmosphere region, each electromagnetic energy beam having an amount of energy less than an amount of energy required to ionize air, the electromagnetic energy beams intersecting at the focal point such that the electromagnetic energy beams cooperatively ionize the air at the focal point to block electromagnetic radiation from passing through the focal point.