High-contrast, subtraction, x-ray images of an object are produced via scanned illumination by a laser-Compton x-ray source. The spectral-angle correlation of the laser-Compton scattering process and a specially designed aperture and/or detector are utilized to produce/record a narrow beam of x-rays whose spectral content consists of an on-axis region of high-energy x-rays surrounded by a region of slightly lower-energy x-rays. The end point energy of the laser-Compton source is set so that the high-energy x-ray region contains photons that are above the k-shell absorption edge (k-edge) of a specific contrast agent or specific material within the object to be imaged while the outer region consists of photons whose energy is below the k-edge of the same contrast agent or specific material. Scanning the illumination and of the object by this beam will simultaneously record and map the above edge and below k-edge absorption response of the object.

A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

An example laser apparatus of the disclosure may include an oscillator capable of outputting a laser beam, a slab optical amplifier capable of amplifying the laser beam outputted by the oscillator by passing the laser beam through an optical amplification region shaped like a slab and outputting the amplified laser beam, and a mirror disposed on an optical path of the laser beam to enter the slab optical amplifier or the amplified laser beam outputted from the slab optical amplifier, the mirror being movable in a direction parallel to a plane where the laser beam travels in the slab optical amplifier.

An extreme ultraviolet light generation device may include a chamber in which extreme ultraviolet light is generated from plasma, the plasma generated by irradiation of a target supplied in a plasma generation region inside of the chamber with laser light; a condenser mirror collecting the extreme ultraviolet light and guiding it to outside of the chamber; a first etching gas supply unit blowing an etching gas to a reflective surface of the condenser mirror and the plasma generation region; a magnet forming a magnetic field in the chamber; a port that intersects a central axis of the magnetic field and that takes in suspended substances generated in the chamber; and an ejection path that is in communication with the port and that ejects the suspended substances taken from the port to the outside of the chamber.

Devices and methods for generating EUV light are disclosed. The device comprises an oscillator having an oscillator cavity length, L.sub.o, and defining an oscillator path and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, L.sub.combined, where L.sub.combined=(N+x)*L.sub.o, where “N” is an integer and “x” is a number between 0.4 and 0.6. The amplifier comprises a polarization discriminating optic inputting light traveling along a first beam path from the oscillator and having substantially a first linear polarization into the amplifier and outputting light having substantially a linear polarization orthogonal to the first polarization out of the amplifier along a second beam path.

An extreme ultraviolet light generation device may include: a chamber earthed to a ground, in which extreme ultraviolet light is generated by irradiating a metal target supplied inside with laser light; a target supply unit earthed to the ground and configured to output the target supplied into the chamber from a nozzle; an extraction electrode configured to exert electrostatic force on the target by applying a negative first potential to the extraction electrode; a first power supply configured to apply the first potential to the extraction electrode; an acceleration electrode unit configured to accelerate the target by applying a negative second potential lower than the first potential to the acceleration electrode unit; a second power supply configured to apply the second potential to the acceleration electrode unit; and a charge neutralizer disposed inside the acceleration electrode unit and configured to emit electrons onto the target.

An extreme ultraviolet light generation system may include a laser system emitting first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit supplying a target to a predetermined region in the chamber; and a processor controlling the laser system to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light.

An x-ray device utilizes a band of material to exchange charge through tribocharging within a chamber maintained at low fluid pressure. The charge is utilized to generate x-rays within the housing, which may pass through a window of the housing. Various contact rods may be used as part of the tribocharging process.

An x-ray device utilizes a band of material to exchange charge through tribocharging within a chamber maintained at low fluid pressure. The charge is utilized to generate x-rays within the housing, which may pass through a window of the housing. Various contact rods may be used as part of the tribocharging process.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance.