A system may include a laser source, an acousto-optic modulator (AOM) coupled to the laser source, an atom trap, and at least one optical medium coupled between the AOM and the atom trap. Furthermore, at least one piezoelectric transducer may be coupled to the at least one optical medium, and a beam polarization controller may be coupled to the at least one piezoelectric transducer.

A system may include a laser source, an acousto-optic modulator (AOM) coupled to the laser source, an atom trap, and at least one optical medium coupled between the AOM and the atom trap. Furthermore, at least one piezoelectric transducer may be coupled to the at least one optical medium, and a beam polarization controller may be coupled to the at least one piezoelectric transducer.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

Ultra-cold atom sensor for measuring a rotational velocity along a measurement axis comprises: means designed to generate a first and a second ultra-cold atom trap, one trap making it possible to immobilize a cloud of ultra-cold atoms in an internal state different from the other trap, at a predetermined distance from the measurement plane, the means comprising, at least one first and one second waveguide that are designed to propagate microwaves with angular frequencies .sub.a and .sub.b, the waveguides being non-secant and positioned symmetrically about an axis called the axis of symmetry, conductive wires integrated into the chip and designed to be flowed through by DC currents, the means being configured to modify the energy of the ultra-cold atoms in such a way as to create a potential minimum for the ultra-cold atoms in the internal state |a> and a potential minimum for the ultra-cold atoms in the internal state |b>, thus forming the first and second ultra-cold atom traps, and to move the traps along a closed path, traveled in one direction by the ultra-cold atoms of the first trap and in the opposite direction by the ultra-cold atoms of the second trap.

Ultra-cold atom sensor for measuring a rotational velocity along a measurement axis comprises: means designed to generate a first and a second ultra-cold atom trap, one trap making it possible to immobilize a cloud of ultra-cold atoms in an internal state different from the other trap, at a predetermined distance from the measurement plane, the means comprising, at least one first and one second waveguide that are designed to propagate microwaves with angular frequencies .sub.a and .sub.b, the waveguides being non-secant and positioned symmetrically about an axis called the axis of symmetry, conductive wires integrated into the chip and designed to be flowed through by DC currents, the means being configured to modify the energy of the ultra-cold atoms in such a way as to create a potential minimum for the ultra-cold atoms in the internal state |a> and a potential minimum for the ultra-cold atoms in the internal state |b>, thus forming the first and second ultra-cold atom traps, and to move the traps along a closed path, traveled in one direction by the ultra-cold atoms of the first trap and in the opposite direction by the ultra-cold atoms of the second trap.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

A method of generating at least one trapped atom of a specific species, the method comprising the steps of: positioning a sample material (18) comprising a specific species in a vacuum (14); generate an atomic vapor (20) of the specific species by irradiating the sample material with a first laser (12); trapping one or more atoms from the generated atomic vapor.

A method of generating at least one trapped atom of a specific species, the method comprising the steps of: positioning a sample material (18) comprising a specific species in a vacuum (14); generate an atomic vapor (20) of the specific species by irradiating the sample material with a first laser (12); trapping one or more atoms from the generated atomic vapor.

Disclosed is a composite beam apparatus capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam. The Composite beam apparatus includes: an electron beam column irradiating an electron beam onto a sample; a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section, wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point.