Static Random Access Memory (SRAM) cells and memory structures are provided. An SRAM cell according to the present disclosure includes a first pull-up gate-all-around (GAA) transistor and a first pull-down GAA transistor coupled to form a first inverter, a second pull-up GAA transistor and a second pull-down GAA transistor coupled to form a second inverter, a first pass-gate GAA transistor coupled to an output of the first inverter and an input of the second inverter, a second pass-gate GAA transistor coupled to an output of the second inverter and an input of the first inverter; a first dielectric fin disposed between the first pull-up GAA transistor and the first pull-down GAA transistor, and a second dielectric fin disposed between the second pull-up GAA transistor and the second pull-down GAA transistor.

An integrated circuit device includes a FinFET disposed over a doped region of a first type dopant, wherein the FinFET includes a first fin structure and first source/drain (S/D) features, the first fin structure having a first width; and a fin-based well strap disposed over the doped region of the first type dopant, wherein the fin-based well strap includes a second fin structure and second S/D features, the second fin structure having a second width that is larger than the first width, wherein the fin-based well strap connects the doped region to a voltage.

A method for fabricating a semiconductor arrangement is provided. The method includes forming a first dielectric layer and forming a first semiconductive layer over the first dielectric layer. The first semiconductive layer is patterned to form a patterned first semiconductive layer. The first dielectric layer is patterned using the patterned first semiconductive layer to form a patterned first dielectric layer. A second semiconductive layer is formed over the patterned first dielectric layer and the patterned first semiconductive layer.

A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate; forming a first gate structure over the substrate and crossing the first semiconductor fin; forming a second gate structure over the substrate and crossing the second semiconductor fin; forming a first gate spacer on a sidewall of the first gate structure; and forming a second gate spacer on a sidewall of the second gate structure, wherein in a top view, an outer sidewall of the first gate spacer farthest from the first gate structure is coterminous with an outer sidewall of the second gate spacer farthest from the second gate structure, and an inner sidewall of the first gate spacer in contact with the first gate structure is misaligned with an inner sidewall of the second gate spacer in contact with the second gate structure.

A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature, and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

An integration system includes a first monolithic die and a second monolithic die. The first monolithic die has a processing unit circuit formed therein; and the second monolithic die has a plurality of SRAM arrays formed therein. Wherein the second monolithic die comprises at least 2G Bytes; and the first monolithic die is electrically connected to the second monolithic die.

A device is disclosed, including a latch circuit, a first pass-gate transistor, and a second pass-gate transistor. The latch circuit stores a bit data and is arranged in a first layer. The first pass-gate transistor and the second pass-gate transistor are arranged in a second layer separated from the first layer. The first pass-gate transistor is coupled between a first bit line and a first terminal of the latch circuit, and the second pass-gate transistor is coupled between a second bit line and a second terminal of the latch circuit.

The present disclosure refers to integrated circuits and static random access memories. In an embodiment, an integrated circuit includes a first n-type metal oxide semiconductor (NMOS) region, a second NMOS region, a first p-type MOS (PMOS) region between the first NMOS region and the second NMOS region, a second PMOS region between the first PMOS region and the second NMOS region, and a first active bridge extending in a first direction and coupling the first NMOS region to the first PMOS region. A level of the first active bridge matches levels of the first electrode of the first pass transistor, the second electrode of the first pass transistor, the first electrode of the first pull-down transistor, the second electrode of the first pull-down transistor, the first electrode of the first pull-up transistor, and the second electrode of the first pull-up transistor.

Systems, methods, and computer-readable media are provided for providing pose estimation in extended reality systems. An example method can include tracking, in a lower-power processing mode using a set of lower-power circuit elements on an integrated circuit, a position and orientation of a computing device during a lower-power processing period, the set of lower-power circuit elements including a static random-access memory (SRAM); suspending, based on a triggering event, the tracking in the lower-power processing mode; initiating a higher-power processing mode for tracking the position and orientation of the computing device during a higher-power processing period; and tracking, in the higher-power processing mode using a set of higher-power circuit elements on the integrated circuit and a dynamic random-access memory (DRAM), the position and orientation of the computing device during the higher-power processing period.

A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.