A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising; exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

Well pick-up (WPU) regions are disclosed herein for improving performance of memory arrays, such as static random access memory arrays. An exemplary integrated circuit (IC) device includes a circuit region, a WPU region, a first well extending lengthwise along a first direction through the circuit region and into the WPU region, a second well extending lengthwise along the first direction through the circuit region and into the WPU region, and a third well physically connecting a portion of the first well in the WPU region and a portion of the second well in the WPU region.

A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

Three-dimensional integrated circuit component(s) are described including a System-on-a-Chip (SoC) die and a separate static random-access memory (SRAM) subcomponent in a vertically stacked arrangement. Such stacked SoC/SRAM integrated circuit components may form part of a system to render artificial reality images.

Three-dimensional integrated circuit component(s) are described including a System-on-a-Chip (SoC) die and a separate static random-access memory (SRAM) subcomponent in a vertically stacked arrangement. Such stacked SoC/SRAM integrated circuit components may form part of a system to render artificial reality images.

A semiconductor structure includes a substrate having a frontside and a backside; a static random-access memory (SRAM) circuit having SRAM bit cells formed on the frontside of the substrate, wherein each of the SRAM bit cells including two inverters cross-coupled together, and a first and second pass gates coupled to the two inverters; a first bit-line disposed on the frontside of the substrate and connected to the first pass gate; and a second bit-line disposed on the backside of the substrate and connected to the second pass gate.

A system and method for efficiently creating layout for memory bit cells are described. In various implementations, a memory bit cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. The memory bit cell includes one of a read bit line and a write word line routed in no other metal layer other than a local interconnect layer. In addition, a six transistor (6T) random access data storage of the given memory bit cell consumes a planar area above a silicon substrate of four transistors.

Semiconductor structure and forming method thereof are provided. The forming method includes: forming a substrate including a power rail region, the power rail region including a first area and a second area, the power rail region having a first fin and a second fin spanning the second area; forming sidewall spacers on sidewall surfaces of the first fin and the second fin after forming the first fin and the second fin; forming a first patterned layer on the substrate, the first patterned layer having a first opening in the first patterned layer exposing the power rail region; etching the substrate using the first patterned layer as a mask to form power rail openings in the substrate; forming isolation films on inner wall surfaces of the power rail openings; and forming buried power rails in the power rail openings after forming the isolation films.