A 3D semiconductor device, the device including: a first level including a plurality of first single crystal transistors and a first metal layer, where the first transistors include forming memory control circuits; a second level including a plurality of second transistors; a third level including a plurality of third transistors, where the second level is above the first level, and where the third level is above the second level; a second metal layer above the third level; and a third metal layer above the second metal layer, where the second transistors are aligned to the first transistors with less than 140 nm alignment error, where the second level includes a plurality of first memory cells, where the third level includes a plurality of second memory cells, and where the memory control circuits are designed to adjust a memory write voltage according to the device specific process parameters

A 3D semiconductor device, the device including: a first level including a single crystal layer and a plurality of first transistors; a first metal layer including interconnects between the plurality of first transistors, where the interconnects between the plurality of first transistors includes forming a plurality of logic gates; a plurality of second transistors atop at least a portion of the first metal layer, where at least six of the plurality of first transistors are connected in series forming at least a portion of a NAND logic structure, where the plurality of second transistors are vertically oriented transistors, and where the plurality of second transistors are at least partially directly atop of the NAND logic structure; and a second metal layer atop at least a portion of the plurality of second transistors, where the second metal layer is aligned to the first metal layer with less than 150 nm misalignment, and where at least one of the second transistors is a junction-less transistor.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching holes within the third level; performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level; and performing a bonding of a fourth level above the third level, where the fourth level includes a second single crystal layer, where each of the first memory cells include one first transistor, where each of the second memory cells include one second transistor, where at least one of the first or second transistors has a channel, a source and a drain having a same doping type.

A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element.

There is provided a method of controlling performance boosting of a semiconductor device. According to the method, input of a user is monitored. A performance of the semiconductor device is boosted by consecutively executing a plurality of boosting policies associated with a plurality of macros based on an input event associated with the input of the user and available energy during a boosting interval. Boosting level in each of the boosting policies may be adaptively determined based on the boosting level and the amount of usage of the semiconductor device used in the previous boosting policy and the boosting policies are consecutively executed. Accordingly, improved and/or optimal performance boosting can be provided to the semiconductor device and at the same time, a waste of power can be mitigated and/or prevented.

A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level on top of or above the second metal layer; performing a lithography step on the second level; forming at least one third level on top of or above the second level; performing processing steps to form first memory cells within the second level and second memory cells within the third level, where the first memory cells include at least one second transistor, the second memory cells include at least one third transistor, first transistors control power delivery to some second transistors; and then forming at least four independent memory arrays which include some first memory cells and/or second memory cells.

A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level on top of or above the second metal layer; performing a lithography step on the second level; forming at least one third level on top of or above the second level; performing processing steps to form first memory cells within the second level and second memory cells within the third level, where the first memory cells include at least one second transistor, the second memory cells include at least one third transistor, first transistors control power delivery to some second transistors; and then forming at least four independent memory arrays which include some first memory cells and/or second memory cells.

A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level on top of or above the second metal layer; performing a lithography step on the second level; forming at least one third level on top of or above the second level; performing processing steps to form first memory cells within the second level and second memory cells within the third level, where the first memory cells include at least one second transistor, the second memory cells include at least one third transistor, first transistors control power delivery to some second transistors; and then forming at least four independent memory arrays which include some first memory cells and/or second memory cells.

A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level on top of or above the second metal layer; performing a lithography step on the second level; forming at least one third level on top of or above the second level; performing processing steps to form first memory cells within the second level and second memory cells within the third level, where the first memory cells include at least one second transistor, the second memory cells include at least one third transistor, first transistors control power delivery to some second transistors; and then forming at least four independent memory arrays which include some first memory cells and/or second memory cells.

A semiconductor device includes first nanostructures vertically separated from one another, a first gate structure wrapping around each of the first nanostructures, and second nanostructures vertically separated from one another. The semiconductor device also includes a second gate structure wrapping around the second nanostructures, a first drain/source structure coupled to a first end of the first nanostructures, a second drain/source structure coupled to both of a second end of the first nanostructures and a first end of the second nanostructures, and a third drain/source structure coupled to a second end of the second nanostructures. The first drain/source structure has a first doping type, the second and third drain/source structures have a second doping type, and the first doping type is opposite to the second doping type.