A neural-network accelerator die is stacked on and integrated with a high-bandwidth memory so that the stack behaves as a single, three-dimensional (3-D) integrated circuit. The accelerator die includes a high-bandwidth memory (HBM) interface that allows a host processor to store training data and retrieve inference-model and output data from memory. The accelerator die additionally includes accelerator tiles with a direct, inter-die memory interfaces to a stack of underlying memory banks. The 3-D IC thus supports both HBM memory channels optimized for external access and accelerator-specific memory channels optimized for training and inference.

According to One embodiment, a semiconductor memory device includes: a first memory cell array; a, second memory cell array arranged above the memory cell array; a third memory cell array arranged adjacent to the first memory cell array; a fourth memory cell array arranged above the third memory cell array and arranged adjacent to the second memory cell array; a first lord line coupled to the first memory cell array and the second memory cell array; a second word line coupled to the third memory cell array and the fourth memory cell array; a first bit line coupled to the first memory cell array and the fourth memory cell array; and a second bit line coupled to the second memory cell array an the third memory cell array.

A storage device includes a non-volatile memory device. The non-volatile memory device includes a first substrate including a first peripheral circuit region including a row decoder selecting one word line from among a plurality of word lines of a three-dimensional (3D) memory cell array and a second substrate including a second peripheral circuit region, including a page buffer unit selecting at least one bit line from among a plurality of bit lines of the 3D memory cell array, and a cell region including the 3D memory cell array formed in the second peripheral circuit region. The 3D memory cell array is disposed between the first peripheral circuit region and the second peripheral circuit region by vertically stacking and bonding the second substrate on and to the first substrate.

A nonvolatile memory device having a multi-stack memory block includes: a memory cell array divided into a plurality of memory stacks disposed in a vertical direction; and a control circuit configured to perform a channel voltage equalization operation of the plurality of memory stacks, wherein inter-stack portions are between the plurality of memory stacks, and a channel hole passes through the word lines of each of the plurality of memory stacks. The control circuit determines, as inter-stack word lines, some word lines adjacent to the inter-stack portions among the word lines of each of the plurality of memory stacks and differently controls setup time points for applying a pass voltage, or recovery time points for applying a ground voltage, to the inter-stack word lines, according to sizes of the channel hole of the inter-stack word lines.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

A multiport memory cell for register files is disclosed. Vertically stacked top and bottom tier of the memory cell are electrically interconnected through a pair of vias and comprise each an active device layer and a metal layer stack. The memory cell is partitioned to have a latching circuit and at least one write port located in the bottom tier and at least two read ports in the top tier. A word line trace for controlling the at least one write port is formed in the bottom tier metal layer stack and comprises two terminal sections and one intermediate section oriented perpendicularly to the terminal sections. The intermediate section is arranged between the pair of vias in a height direction of the memory cell.

A multiport memory cell for register files is disclosed. Vertically stacked top and bottom tier of the memory cell are electrically interconnected through a pair of vias and comprise each an active device layer and a metal layer stack. The memory cell is partitioned to have a latching circuit and at least one write port located in the bottom tier and at least two read ports in the top tier. A word line trace for controlling the at least one write port is formed in the bottom tier metal layer stack and comprises two terminal sections and one intermediate section oriented perpendicularly to the terminal sections. The intermediate section is arranged between the pair of vias in a height direction of the memory cell.

The present disclosure provides a memory system packaging structure and fabrication methods. The memory system packaging structure includes memory modules, a memory controller, a redistribution layer electrically connected to the memory controller, a plastic encapsulation layer encapsulating the memory modules and the memory controller, and one or more connecting pillars extending in the vertical direction and configured for providing electric power to the memory modules. Each memory module includes memory dies stacked in a vertical direction. Each connecting pillar includes a first portion being in physical contact with one of the memory dies and a second portion being in physical contact with the redistribution layer.

The present disclosure provides a memory system packaging structure and fabrication methods. The memory system packaging structure includes memory modules, a memory controller, a redistribution layer electrically connected to the memory controller, a plastic encapsulation layer encapsulating the memory modules and the memory controller, and one or more connecting pillars extending in the vertical direction and configured for providing electric power to the memory modules. Each memory module includes memory dies stacked in a vertical direction. Each connecting pillar includes a first portion being in physical contact with one of the memory dies and a second portion being in physical contact with the redistribution layer.