Continuing a sequence of lensless light-field imaging camera patents beginning 1999, the present invention adds light-use efficiency, predictive-model design, distance-parameterized interpolation, computational efficiency, arbitrary shaped surface-of-focus, angular diversity/redundancy, distributed image sensing, plasmon surface propagation, and other fundamentally enabling features. Embodiments can be fabricated entirely by printing, transparent/semi-transparent, layered, of arbitrary size/curvature, flexible/bendable, emit light, focus and self-illuminate at zero-separation distance between (planar or curved) sensing and observed surfaces, robust against damage/occultation, implement color sensing without use of filters or diffraction, overlay on provided surfaces, provided color and enhanced multi-wavelength color sensing, wavelength-selective imaging of near-infrared/near-ultraviolet, and comprise many other fundamentally enabling features. Embodiments can be thinner, larger/smaller, more light-use efficient, and higher-performance than recently-popularized coded aperture imaging cameras. Vast ranges of diverse previously-impossible applications are enabled: credit-card cameras/phones, in-body monitoring of healing/disease, advanced biomarker analysis systems, perfect eye-contact video conferencing, seeing fabrics/skin/housings, and manufacturing-monitoring, wear-monitoring, and machine vision capabilities.

An organic molecular memory of embodiments includes: a first electrode; a second electrode; an organic molecular layer provided between the first electrode and the second electrode, extending in a first direction from the first electrode toward the second electrode, and containing a first molecule and a second molecule provided between the first molecule and the second electrode; and a third electrode facing the second molecule.

A semiconductor memory device includes a plurality of semiconductor patterns extending in a first horizontal direction and separated from each other in a second horizontal direction and a vertical direction, each semiconductor pattern including a first source/drain area, a channel area, and a second source/drain area arranged in the first horizontal direction; a plurality of gate insulating layers covering upper surfaces or side surfaces of the channel areas; a plurality of word lines on the upper surfaces or the side surfaces of the channel areas; and a plurality of resistive switch units respectively connected to first sidewalls of the semiconductor patterns, extending in the first horizontal direction, and separated from each other in the second horizontal direction and the vertical direction, each resistive switch unit including a first electrode, a second electrode, and a resistive switch material layer between the first and second electrodes and including carbon nanotubes.

A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

A novel semiconductor device is provided. The semiconductor device includes a programmable logic device including a programmable logic element, a control circuit, and a detection circuit. The programmable logic device includes a plurality of contexts. The control circuit is configured to control selection of the contexts. The detection circuit is configured to output a signal corresponding to the amount of radiation. The control circuit is configured to switch between a first mode and a second mode in accordance with the signal corresponding to the amount of radiation. The first mode is a mode in which the programmable logic device performs processing by a multi-context method, and the second mode is a mode in which the programmable logic device performs processing using a majority signal of signals output from the logic element multiplexed by the plurality of contexts.

A multispectral imaging device comprises a first photoelectric conversion module and a second photoelectric conversion module. The first photoelectric conversion module further includes a first photoelectric conversion layer located between a first conducting layer and a second conducting layer. The first conducting layer, coupled to a first constant potential, is configured to allow visible light and infrared light passing through, the first photoelectric conversion layer is configured to convert the visible light into a first electrical signal. The second photoelectric conversion module, formed on a silicon substrate, is configured to receive the infrared light coming from the first photoelectric conversion module. The second photoelectric conversion layer located between a third conducting layer and a fourth conducting layer, wherein the third conducting layer is configured to allow the infrared light passing through, the second photoelectric conversion layer is configured to convert the infrared light into a second electrical signal.

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.r(B.sup.1).sub.n(Z.sup.2-A.sup.2).sub.s-Sp-G(I)
in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.