In a memory cell unit array, memory cell units each constituted of first wires, second wires, and a nonvolatile memory cell are arranged in a two-dimensional matrix form in a first direction and a second direction. Each of the memory cell units includes a control circuit below it. The control circuit is constituted of a first control circuit and a second control circuit. The second wires are connected to the second control circuit. Some of the first wires that constitute the memory cell unit are connected to the first control circuit that constitutes this memory cell unit. Others of the first wires are connected to the first control circuit that constitutes an adjacent memory cell unit adjacent thereto in the first direction.

An organic light emitting diode (OLED) display includes: a substrate including a plurality of organic light emitting elements; an adhesive member on at least a portion of an upper surface of the substrate; a flexible circuit board adhered to the upper surface of the adhesive member and having a portion bent to be mounted to a lower surface of the substrate; and a light blocking member at the upper surface of the substrate, wherein the light blocking member is laterally offset from the adhesive member.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the second level includes a plurality of bond pads, where the bonding structure includes oxide to oxide bonding.

An antenna array is provided including a substrate, a metal ground plane proximate the substrate, and a dielectric layer proximate the metal ground plane. A first plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and connected in series. A second plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and also connected in series. The first and second plurality of antenna elements are electrically isolated. The antenna elements of the first plurality of antenna elements are configured to detect a first wavelength, while the antenna elements of the second plurality of antenna elements are configured to detect a second wavelength, different from the first wavelength.

An antenna array is provided including a substrate, a metal ground plane proximate the substrate, and a dielectric layer proximate the metal ground plane. A first plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and connected in series. A second plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and also connected in series. The first and second plurality of antenna elements are electrically isolated. The antenna elements of the first plurality of antenna elements are configured to detect a first wavelength, while the antenna elements of the second plurality of antenna elements are configured to detect a second wavelength, different from the first wavelength.

A molecular memory recording molecular polarization of a single-molecule electret, and the single-molecule electret includes a cluster skeleton 100 having a continuous hole 101 and a plurality of stable ionic sites 102a, 102b and a metal ion M. The molecular polarization is shown in a state in which the metal ion is included in the stable ionic site. The molecular polarization is changed by movement of the metal ion to the other hollow stable ionic site by application of an electric field. The recordkeeping time of the molecular memory in a temperature range of 100 C. to 100 C. based on the ion radius of the metal ion is 3.010.sup.2 seconds to 9.110.sup.22 seconds. Based on the recordkeeping time, the molecular memory is used as any of a volatile memory, a non-volatile memory, and a storage class memory.

Certain examples include an elastic transistor having multiple layers, as a monolithic IC, to provide a stretchable high-k multi-layer dielectric that in response to a low-drive voltage, operates to provide (stable or steady-state) operation. The stretchable layers include: a high-k dielectric layer, and another dielectric layer, with the high-k dielectric layer being between the gate of the elastic transistor and the other dielectric layer. More-specific examples, useful in combination, have two types of the above-characterized elastic transistors cooperatively arranged and respectively implemented as a semiconductor with multiple different dielectric materials and as a synaptic transistor with the high-k dielectric layer including a border interface region characterized as one of a polycation interface and a polyanion interface and with the other dielectric layer corresponding to an interfacial portion along an outer border of the high-k dielectric layer.

An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

Continuing a sequence of lensless light-field imaging camera patents beginning 1999, the present invention adds light-use efficiency, predictive-model design, distance-parameterized interpolation, computational efficiency, arbitrary shaped surface-of-focus, angular diversity/redundancy, distributed image sensing, plasmon surface propagation, and other fundamentally enabling features. Embodiments can be fabricated entirely by printing, transparent/semi-transparent, layered, of arbitrary size/curvature, flexible/bendable, emit light, focus and self-illuminate at zero-separation distance between (planar or curved) sensing and observed surfaces, robust against damage/occulation, implement color sensing without use of filters or diffraction, overlay on provided surfaces, provided color and enhanced multi-wavelength color sensing, wavelength-selective imaging of near-infrared/near-ultraviolet, and comprise many other fundamentally enabling features. Embodiments can be thinner, larger/smaller, more light-use efficient, and higher-performance than recently-popularized coded aperture imaging cameras. Vast ranges of diverse previously-impossible applications are enabled: credit-card cameras/phones, in-body monitoring of healing/disease, advanced biomarker analysis systems, perfect eye-contact video conferencing, seeing fabrics/skin/housings, and manufacturing-monitoring, wear-monitoring, and machine vision capabilities.