An organic molecular memory of embodiments includes: a first electrode; a second electrode; an organic molecular layer provided between the first electrode and the second electrode, extending in a first direction from the first electrode toward the second electrode, and containing a first molecule and a second molecule provided between the first molecule and the second electrode; and a third electrode facing the second molecule.

Disclosed is a method for manufacturing a flexible organic light-emitting diode (OLED) display component which includes steps of: forming a ferromagnetic material layer on a surface of a flexible substrate; and abutting the ferromagnetic material layer against a flat bearing surface, and applying a magnetic pull force directing to the bearing surface on the ferromagnetic material layer. Drawn by the magnetic pull force, the ferromagnetic material layer abuts closely against the flat bearing surface, smoothing out the flexible substrate, and meanwhile fixing the flexible substrate on the bearing surface.

In a memory cell unit array, memory cell units each constituted of first wires, second wires, and a nonvolatile memory cell are arranged in a two-dimensional matrix form in a first direction and a second direction. Each of the memory cell units includes a control circuit below it. The control circuit is constituted of a first control circuit and a second control circuit. The second wires are connected to the second control circuit. Some of the first wires that constitute the memory cell unit are connected to the first control circuit that constitutes this memory cell unit. Others of the first wires are connected to the first control circuit that constitutes an adjacent memory cell unit adjacent thereto in the first direction.

A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

A pixel circuit, a drive method, a display panel and a display device are provided. A switch transistor is arranged between a first power supply signal and an input terminal (a source) of a drive transistor. When a drive circuit is at a second detection period during which drive current of a light emitting element is detected, the switch transistor is controlled to be turned off, such that the first power supply signal is disconnected from the source of the drive transistor. In this case, no current flows through the light emitting element, and therefore the light emitting element does not emit light, thereby solving a problem in the conventional technology that the light emitting element is lighted and it is not dark in a dark state when drive current of the pixel circuit is detected.

A display device includes at least one first and second electrodes extending in a first direction, at least one first and second light emitting elements disposed therebetween, a first contact electrode partially covering the first electrode and contacting a first end of the first light emitting element, a second contact electrode partially covering the second electrode and contacting a third end of the second light emitting element, and a third contact electrode disposed between the first and second contact electrodes and contacting a second end of the first light emitting element and a fourth end of the second light emitting element, in which a distance between the first and second electrodes is greater than a longitudinal length of at least one of the first and second light emitting elements, and the first and second light emitting elements are connected in series between the first and second electrodes.

A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

A cross-bar ReRAM comprising a substrate, a plurality of first columns extending parallel to each other on the top surface of the substrate, wherein each of the plurality of the first columns includes a resistive random-access memory (ReRAM) stack comprised of a plurality of layers. A plurality of second columns extending parallel to each other and the plurality of second columns extending perpendicular to the plurality of first columns, wherein the plurality of second columns is located on top of the plurality of first columns, such that the plurality of second columns crosses over the plurality of first columns. A dielectric layer filling in the space between the plurality of first columns and the plurality of second columns, wherein the dielectric layer is in direct contact with a sidewall of each of the plurality layers of the ReRAM stack.

A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.