An image sensor includes: a photoelectric conversion film that performs photoelectric conversion on light having entered therein; at least two electrodes, including a first electrode and a second electrode, disposed at a surface of the photoelectric conversion film; and at least two electrodes, including a third electrode and a fourth electrode, disposed at another surface of the photoelectric conversion film.

A display device may include a substrate. A first light emitting element is disposed on the substrate. A second light emitting element is disposed on the substrate and is positioned adjacent to the first light emitting element. A first encapsulation layer is disposed on the first light emitting element and the second light emitting element. A light path control layer is disposed on the first encapsulation layer. The light path control layer includes a first pattern overlapping the first light emitting element and having a first refractive index and a second pattern overlapping the second light emitting element and having a second refractive index that is greater than the first refractive index.

An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode and converts light to charge, and an electron blocking layer that is arranged between the first electrode and the photoelectric conversion layer and suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of nickel. The carbon concentration in the electron blocking layer is 0.1 atom % or more and 1.3 atom % or less.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as described in the detailed description.

A solid-state imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as described in the detailed description.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

An image sensor includes: a photoelectric conversion film that performs photoelectric conversion on light having entered therein; at least two electrodes, including a first electrode and a second electrode, disposed at a surface of the photoelectric conversion film; and at least two electrodes, including a third electrode and a fourth electrode, disposed at another surface of the photoelectric conversion film.

A technique of producing a device comprising a stack of layers defining an array of transistors and including one or more electrically conductive interlayer connections, wherein the method comprises: forming a source-drain conductor pattern defining an array of source conductors each providing an addressing line for a respective set of transistors of the transistor array, and an array of drain conductors each associated with a respective transistor of the transistor array; wherein forming said source-drain conductor pattern comprises forming a first conductor subpattern and thereafter forming a second conductor subpattern, wherein said first conductor subpattern provides the conductive surface of the source-drain conductor pattern in one or more interconnect regions where electrically conductive interlayer connections are to be formed to the source-drain conductor pattern, and the second conductor subpattern provides the conductive surface of the source-drain conductor pattern at least in the regions where the source and drain conductors are in closest proximity.

A solid-state imaging element includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode. The first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.