H10K30/00

Methods and systems of organic semiconducting polymers

An organic photovoltaic device comprising a polymer: ##STR00001##
and an acceptor. In this organic photovoltaic device, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are independently selected from the group consisting of: a halogen, a substituted alkyl, an unsubstituted alkyl, a substituted aryl, an unsubstituted aryl, a substituted heteroaryl and an unsubstituted heteroaryl.

Methods and systems of organic semiconducting polymers

An organic photovoltaic device comprising a polymer: ##STR00001##
and an acceptor. In this organic photovoltaic device, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are independently selected from the group consisting of: a halogen, a substituted alkyl, an unsubstituted alkyl, a substituted aryl, an unsubstituted aryl, a substituted heteroaryl and an unsubstituted heteroaryl.

FLUORINE-SUBSTITUTED PI-BRIDGE (?-BRIDGE) SELENIDE POLYMER ACCEPTOR AND PREPARATION AND APPLICATION THEREOF
20230180593 · 2023-06-08 ·

Disclosed is a fluorine-substituted Pi(π)bridge selenide polymer acceptor material, its preparation and application. The selenide polymer acceptor material is named PYSe2FT and is synthesized by Knoevenagel condensation reaction and Still cross-coupling reaction; the material PYSe2FT takes a selenium-substituted core donor unit as a main structure, and combines a difluoro-substituted thiophene π-electronic connection unit, where the selenium-substituted core donor unit and the difluoro-substituted thiophene π-electronic connection unit can effectively regulate and control the molecular energy level, so that molecules generate good accumulation, thus making PYSe-2FT an excellent polymer acceptor material.

Imaging device including a photoelectric converter and a capacitive element having a dielectric film sandwiched between electrodes and a mode switching transistor

An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Nanowires or nanopyramids grown on a graphene substrate

A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.

PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE SENSOR USING SAME

A photoelectric conversion element, including a first electrode, a second electrode, and at least one organic layer being present between the first electrode and the second electrode, in which the organic layer contains at least two kinds of compounds having the same skeletons and different substituents in combination.

Organic semiconductor compositions
09799830 · 2017-10-24 · ·

The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as the semiconducting material for use in formulations for organic thin film-transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

Polymer compound and organic semiconductor device using the same

A polymer compound comprising a structural unit represented by the formula (1): ##STR00001##
wherein Ring A and Ring B represent each independently a heterocyclic ring, and the heterocyclic ring may have a substituent, Ring C represents an aromatic hydrocarbon ring obtained by condensing two or more benzene rings, the aromatic hydrocarbon ring has at least one of an alkyl group, an alkoxy group, an alkylthio group, an amino group or a hydroxyl group, and these groups may have a substituent, Z.sup.1 and Z.sup.2 represent each independently a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4) or a group represented by the formula (Z-5), ##STR00002##
wherein R represents an alkyl group, an alkoxy group, an alkylthio group, an aryl group or a mono-valent heterocyclic group, and these groups may have a substituent, and when there exist a plurality of R, these may be the same or different.

GRAPHENE OPTICAL SENSOR
20230178610 · 2023-06-08 · ·

A graphene optical sensor includes a graphene layer having a surface, a first electrode and a second electrode, formed on the surface of the graphene layer, and arranged in a first direction parallel to the surface of the graphene layer, and a plurality of plasmonic antennas provided on the surface of the graphene layer between the first and second electrodes. Each plasmonic antenna of the plurality of plasmonic antennas, in a plan view, includes a first rod portion extending in a second direction inclined from the first direction, and a second rod portion extending in a third direction inclined from the first direction in a direction opposite the second direction with reference to the first direction, and intersecting the first rod portion. The plurality of the plasmonic antennas is arranged periodically in the second direction and in the third direction.

PHOTO DETECTOR
20230180489 · 2023-06-08 ·

A photo detector is provided with a metal, a semiconductor, a first electrode, and a second electrode. In addition, a pre-treatment and/or a post-treatment is performed to the photo detector to reduce its noise and hence improves the signal-to-noise ratio (SNR). The provided photo detector can quickly respond to short mid-infrared light and generate low noise and high SNR currents.