A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.

A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX.sub.2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.

An organic molecule is disclosed having a a first chemical unit having a structure according to Formula I ##STR00001## and two second chemical units, which are respectively the same or different in each occurrence, and have a structure according to Formula II, ##STR00002## wherein, in each case, the first chemical unit s connected to the two second chemical units via a single bond.

The present invention is to provide a photoelectric conversion element having an excellent photoelectric conversion efficiency and responsiveness after heating over time. In addition, the present invention is to provide an imaging element, an optical sensor, a material for a photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and an n-type semiconductor material.

The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound.

The present specification provides a photoactive layer including: an electron donor; and an electron acceptor, in which the electron donor includes: a single molecular material; and a polymer material, a content of the electron donor is higher than a content of the electron acceptor, and in the electron donor, a content of the single molecular material is higher than a content of the polymer material, and an organic solar cell including the same.

The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode: ##STR00001##
wherein M is a metal ion, each of A.sup.1-A.sup.4 is independently selected from H, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted C2-C20 heteroaryl and n is valency of the metal ion.

The hybrid organic-inorganic perovskite-based solar cell with copper oxide as a hole transport material includes a transparent conducting film layer (12) sandwiched between a glass substrate (11) and a titanium dioxide layer (14). The transparent conducting film layer (12) can be fluorine-doped tin oxide. A lead methylammonium tri-iodide perovskite layer (16) is formed on the titanium dioxide layer (14), such that the titanium dioxide layer (14) is sandwiched between the lead methylammonium tri-iodide perovskite layer (16) and the transparent conducting film layer (12). A layer of copper oxide (Cu2O) (18), as a hole transport material, is formed on the lead methylammonium tri-iodide perovskite layer (16). The lead methylammonium tri-iodide perovskite layer (16) is sandwiched between the layer of hole transport material (18) and the titanium dioxide layer (14). A gold contact (20) is formed on the layer of hole transport material (18).

An imaging device includes pixels. Each of the pixels includes a first single-crystal semiconductor layer transmitting light, a first electrode, and a photoelectric conversion layer in contact with the first single-crystal semiconductor layer. The photoelectric conversion layer is positioned between the first single-crystal semiconductor layer and the first electrode and absorbs the light. The first single-crystal semiconductor layer, the photoelectric conversion layer, and the first electrode are arranged in order mentioned such that the light after passing through the first single-crystal semiconductor layer is incident on the photoelectric conversion layer.

There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.