An organic compound represented by general formula (1) is a novel organic compound having an absorption band in the near infrared region, and is useful for infrared absorbing dyes, optical films, and organic electronic devices such as photoelectric conversion elements, wherein R.sup.1 to R.sup.18 each independently represent a hydrogen atom, an aryl group, a heteroaryl group, an alkyl group, a cycloalkyl group, a halogen atom, a hydroxy group, an alkoxy group, a mercapto group, an alkylthio group, a nitro group, a substituted amino group, an amide group, an acyl group, a carboxyl group, an acyloxy group, a cyano group, a sulfo group, a sulfamoyl group, an alkylsulfamoyl group, a carbamoyl group, or an alkylcarbamoyl group; and X represents a substituted or unsubstituted methine group, a silylidyne group, a germylidyne group, a stannylidyne group, a nitrogen atom, a phosphorus atom, an arsenic atom, or an antimony atom. ##STR00001##

Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

A p-n photovoltaic cell (10) comprising a crystalline-silicon structure (11) coated with a conductive film (12) formed using a p-type dopant solution and an n-type dopant solution, the p-type and n-type dopant solutions including carotenoid components. A method for manufacturing an encapsulated p-n photovoltaic cell using the p-n photovoltaic cell (10) and the use of these encapsulated photovoltaic cells (19) forming modules (15) that are used to form, with photovoltaic tiles (20), single parts with electrical energy generation and coverage functions. An electrical connection unit for a photovoltaic tile (20) that is used to simply and safely conduct the electrical energy generated by the photovoltaic tiles (20) to an inverter.

An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, the multilayer wiring structure includes an insulating layer adjacent to the first capacitance element, and a permittivity of the dielectric film is greater than a permittivity of the insulating layer.

The present invention relates to a bias-switchable spectral response high performance PD with multi-mode detection, e.g., dual-mode photoresponses in NIR and visible light ranges. The dual-mode PD has the absorber/spacer type components in its active layer, e.g., a tri-layer configuration of absorber-1 (absorber-1 absorbs the electromagnetic wave of the first wavelength comprising visible light)/optical spacer/absorber-2 (absorber-2 absorbs the electromagnetic wave of the second wavelength comprising IR light). In the presence of IR light, photocurrent generates in the IR light absorbing layer under a reverse bias. In the presence of visible light, photocurrent generates in the visible light absorbing layer under a forward bias. A bias-switchable spectral response PD offers an attractive option for applications in environmental pollution, bio, medical, agricultural, automotive, fishery, food, wellness and security monitoring, detection and imaging in two or different or multiple distinct bands.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; a photoelectric converter; a first hydrogen block layer; an interlayer insulating layer; and a separation groove. The photoelectric converter includes a first electrode, a second electrode, and an electric charge accumulation layer and a photoelectric conversion layer. The first electrode is provided on a light receiving surface side of the semiconductor substrate and includes a plurality of electrodes. The second electrode is disposed to be opposed to the first electrode. The electric charge accumulation layer and the photoelectric conversion layer are stacked and provided in order between the first electrode and the second electrode and extend in the effective pixel region. The first hydrogen block layer covers a top and a side surface of the photoelectric conversion layer and a side surface of the electric charge accumulation layer. The interlayer insulating layer is provided between the semiconductor substrate and the photoelectric converter. The separation groove separates the interlayer insulating layer in at least a portion of a region between the effective pixel region and the peripheral region. The separation groove has a side surface and a bottom surface covered with the first hydrogen block layer.

An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

The present disclosure belongs to the field of organic electroluminescent materials, and specifically relates to a nitrogen-containing compound, an electronic component using the nitrogen-containing compound and an electronic device using the nitrogen-containing compound. The nitrogen-containing compound has a structure as shown in Formula 1. When the nitrogen-containing compound of the present disclosure is used in an organic electroluminescent device, properties of the device can be effectively improved. ##STR00001##